Low resistivity p+ diamond (100) films fabricated by hot-filament chemical vapor deposition

Ohmagari, Shinya; Srimongkon, Kridsanapan; Yamada, Hideaki; Umezawa, Hamao; Tsubouchi, Nobuteru; Chayahara, Akiyoshi; Shikata, Shinichi; Mokuno, Yoshiaki

doi:10.1016/j.diamond.2015.06.011

Cited by 35 publications

(9 citation statements)

References 32 publications

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“…Signicant progress on the hetero-epitaxial growth of c-BN on single-crystal diamond has been achieved via physical vapor deposition (PVD) 9 and on polycrystalline diamond via plasma-enhanced chemical vapor deposition (PECVD) employing uorine chemistry. 10,11 Unfortunately, c-BN lms have mostly been of poor structural quality due to the necessity of applied energetic ion bombardment during deposition, making electronic applications practically impossible. Few theoretical calculations have been performed on the stability, electronic structure, density of state and band offsets of the (100) and (110) c-BN/diamond hetero-interfaces.…”

Section: Introductionmentioning

confidence: 99%

The electronic properties and band-gap discontinuities at the cubic boron nitride/diamond hetero-interface

Zhao

Gao

et al. 2019

RSC Adv.

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Section: Introductionmentioning

confidence: 99%

The electronic properties and band-gap discontinuities at the cubic boron nitride/diamond hetero-interface

Zhao

Gao

et al. 2019

RSC Adv.

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“…The B concentration and film resistivity were 5 × 10 20 cm −3 and 10 mΩ cm, respectively, which realize p+ conduction as well as substrates. 25) Next, the p− drift layer and electrodes were prepared in the same manner as for Diode-A. We labeled these diodes Diode-B (after insertion of a MAT buffer layer).…”

Section: Methodsmentioning

confidence: 99%

Suppression of killer defects in diamond vertical-type Schottky barrier diodes

Kobayashi

Ohmagari

Umezawa

et al. 2020

Jpn. J. Appl. Phys.

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Vertical architectures in diamond Schottky barrier diodes (VSBDs) are favorable for realizing high-current operation. However, a major obstacle affecting performance is the presence of killer defects which are thought to originate from heavily B-doped p+ substrates. Here, we introduced a buffer layer to suppress the extended defects from p+ substrate to epitaxial layer, called metal-assisted termination. Significant reduction of band-A luminescence in cathodoluminescence spectra was confirmed, indicating a large improvement in crystallinity. VSBDs showed highly uniform rectifying actions with suppressed leakage currents. The electric field strength was increased from 1.9 to 5.0 MV cm −1 when a buffer layer was inserted. © 2020 The Japan Society of Applied Physics 12 μm and 350 μm, respectively. Current-voltage (I-V ) characteristics were assessed at room temperature using a semiconductor parameter analyzer (Agilent Technologies,

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“…The typical film thickness and boron concentration, as measured by secondary ion mass spectrometry, were 5 mm and >10 20 cm −3 , respectively. Details of the preparation conditions can be found in our previous report [ 30 ].…”

Section: Methodsmentioning

confidence: 99%

High-Density and Monodisperse Electrochemical Gold Nanoparticle Synthesis Utilizing the Properties of Boron-Doped Diamond Electrodes

et al. 2022

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Owing to its simplicity and sensitivity, electrochemical analysis is of high significance in the detection of pollutants and highly toxic substances in the environment. In electrochemical analysis, the sensitivity of the sensor and reliability of the obtained signal are especially dependent on the electrode characteristics. Electrodes with a high density of nanomaterials, which exhibit excellent activity, are useful as sensor substrates for pollutant detection. However, the effective placement of high-density nanomaterials requires a high degree of control over the particle size, particle shape, and distance between the particles on the substrate. In this study, we exploited the properties of boron-doped diamond (BDD) electrodes, which have a wide potential window, and succeeded in coating a highly dense layer of gold nanoparticles (AuNPs) at high potential. The AuNP-modified BDD (AuNP-BDD) electrodes comprising less than 100 nm AuNPs at a density of 125 particles/µm were electrochemically synthesized over a short period of 30–60 s. The AuNP-BDD electrodes were applied for detecting arsenic, which is one of the most abundant elements, and exhibited a limit of detection of 0.473 ppb in solution.

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Low resistivity p+ diamond (100) films fabricated by hot-filament chemical vapor deposition

Cited by 35 publications

References 32 publications

The electronic properties and band-gap discontinuities at the cubic boron nitride/diamond hetero-interface

The electronic properties and band-gap discontinuities at the cubic boron nitride/diamond hetero-interface

Suppression of killer defects in diamond vertical-type Schottky barrier diodes

High-Density and Monodisperse Electrochemical Gold Nanoparticle Synthesis Utilizing the Properties of Boron-Doped Diamond Electrodes

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