Low Resistivity p[sup +] Polycrystalline Silicon Deposition at Low Temperatures with SiH[sub 4]/BCl[sub 3]

Three-dimensional thin-film-transistor silicon-oxide-nitride-oxide-silicon memory cell formed on large grain sized polysilicon films using nuclei induced solid phase crystallization

“…7 The gate is in situ doped p+ polysilicon. 17 The gate length and width were 0.15 m. Gates were silicided to lower the sheet resistance. Electrical contacts, interconnects, and dielectric isolation were made in the ways similar to traditional CMOS device manufacturing.…”

A theoretical study on a reaction of iron(III) hydroxide with boron trichloride by ab initio calculation

“…Let us start from describing some industrial background. Boron trichloride is one of the semiconductor gases, which is used, for example, as a preferential plasma etching gas for aluminum and a source of boron for p-type doping in the process of chemical vapor deposition [1,2,3]. High purity is required for semiconductor gases to be used in the production process of recent high integrated device and thin insulating film.…”