For the first time, a scalable, low power, deep-submicron TITSONOS (Thin-Film Transistor Silicon-Oxide-NitrideOxide-Silicon) memory cell is described with characteristics rivaling those of single crystal devices (>IO6 cycles, -1.6V window after 10 years on cycled cell at 85C) showing the promise of 3D integration and ultrasmall cell footprints. The ability to .vertically stack device layers enables the current memory density record of -200Mbyte/cm2, set by 90nm NAND, to be surpassed.

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Articles you may be interested inFabrication and characterization of metal-oxide-nitride-oxynitride-polysilicon nonvolatile semiconductor memory device with silicon oxynitride ( Si O x N y ) as tunneling layer on glass

A Schottky diode consisting of doped polycrystalline silicon (polysilicon) and CoSi2 films is described. When an SiO2 antifuse thin film is grown in between the polysilicon and CoSi2, the film stack can function as a nonvolatile one-time programmable memory cell. The cell is programmed when the SiO2 that insulates the doped polysilicon from the CoSi2 is broken down by applying a large biasing field, and unprogrammed when the antifuse is not broken down. By taking advantage of the ability to grow SiO2 directly on CoSi2, the entire device can made with only two masking steps and relatively simple tool set, while achieving high density.

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