Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition

Ji, Shiyang; Kojima, Kazutoshi; Ishida, Yuuki; Tsuchida, Hidekazu; Yoshida, Sadafumi; Okumura, Hajime

doi:10.4028/www.scientific.net/msf.740-742.181

Cited by 24 publications

(30 citation statements)

References 8 publications

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“…SiC power devices tend to show better performance when it is used as n-channels rather than p-channels; to achieve even more enhanced performance, the device needs to be grown epitaxially on low-resistivity p-type substrates. However, at present, the commercially available p-type 4H-SiC substrate has relatively high resistivity (~2.5 Ω•cm), which is about two orders of magnitude higher than that of the n-type substrate [96]. The advantages of n-channel SiC devices weaken if the high resistivity p-type substrate is used.…”

Section: Sic Critical Stepmentioning

confidence: 99%

“…Finally, the structure is coated with a polyimide layer as a protective passivation layer. To improve the performance of the device by reducing the number of defects present in the SiC substrate and epitaxial layer, various methods of ion implantations and thermal oxidation processes are employed [96,97]. The performance, reliability, and stability of the SiC devices also depend on the quality of the SiC wafers [102,103], and the yield of the SiC components indirectly affects the cost of manufacturing.…”

Section: Sic Critical Stepmentioning

confidence: 99%

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Review of Silicon Carbide Processing for Power MOSFET

et al. 2022

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Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, higher thermal conductivity, higher operating frequency, higher operating temperature, and higher saturation drift velocity, SiC has attracted much attention from researchers and the industry for decades. With the advances in material science and processing technology, many power applications such as new smart energy vehicles, power converters, inverters, and power supplies are being realized using SiC power devices. In particular, SiC MOSFETs are generally chosen to be used as a power device due to their ability to achieve lower on-resistance, reduced switching losses, and high switching speeds than the silicon counterpart and have been commercialized extensively in recent years. A general review of the critical processing steps for manufacturing SiC MOSFETs, types of SiC MOSFETs, and power applications based on SiC power devices are covered in this paper. Additionally, the reliability issues of SiC power MOSFET are also briefly summarized.

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Section: Sic Critical Stepmentioning

confidence: 99%

Section: Sic Critical Stepmentioning

confidence: 99%

Review of Silicon Carbide Processing for Power MOSFET

et al. 2022

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“…Therefore, these findings reveal that the codoping of N to Al-doped 4H-SiC grown by CVD only causes a small drop in the growth rate and improves the surface morphology since the variations of epilayer thicknesses are small and all about 7 µm. 28,29) The concentrations of Al and N impurities in each sample measured by SIMS are listed in Table I. The table shows that the concentration of Al impurity in all the samples grown at various N 2 flow rates are approximately mid 10 19 cm ¹3 , suggesting that the intentional doping of N 2 has only small effects on Al incorporation.…”

Section: Resultsmentioning

confidence: 99%

Experiment on alleviating the bending of CVD-grown heavily Al-doped 4H-SiC epiwafer by codoping of N

Kojima

Ishida

et al. 2015

Jpn. J. Appl. Phys.

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In order to alleviate the convex wafer bow that commonly occurs on a heavily Al-doped 4H-SiC epilayer grown on an n + substrate, nitrogen gas was intentionally introduced, together with an Al dopant gas during CVD growth, that is Al-N codoping. It was found that, by introducing N 2 at various flow rates, the concentration of incorporated N impurity increases along with the supplied flow rate, while the Al impurity remains at a similar concentration. With the codoping of N and Al in 4H-SiC, a marked reduction of wafer bow has been achieved. The crystal structural measurement suggests that the introduction of N impurity alleviates the large wafer bow owing to the reduced lattice constant differences between the p + epilayer and the n + substrate.

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“…9 For Al atom-doped p-type 4H-SiC, the Al dopants showed fully activated dopants, even though the doping concentration was up to ∼10 20 cm −3 . 10 Furthermore, it has been reported that higher Al doping concentration (∼10 20 cm −3 ) resulted in lattice strain. 11 For SiC, the number of valence electrons is the same at the respective Si and C atoms in SiC.…”

Section: Introductionmentioning

confidence: 99%

X-ray Absorption Fine Structural Study of Atomic Structures and Chemical States of Dopants in 4H-SiC(0001)

Tsai

Tang

Yamashita

2023

ACS Appl. Electron. Mater.

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The atomic structures and chemical states of active and inactive dopant sites in n-type and p-type 4H-SiC(0001) substrates have been investigated by X-ray absorption near edge structure (XANES) and photoelectron spectroscopy (PES). In N atom-doped n-type 4H-SiC(0001), the PES results indicated that a N− C species was formed near the surface. XANES simulations showed that SiNx and N−C species were attributed to active and inactive dopant states, respectively. Angle-resolved XANES measurements showed that the N−C species acted as an inactive dopant site in N-doped 4H-SiC(0001). In Al-doped p-type 4H-SiC, PES analysis revealed that a single chemical state was present at the Al-doped 4H-SiC. The simulated XANES spectra showed that the Si site in 4H-SiC(0001) was replaced by an Al dopant atom, which was the active dopant site. Furthermore, relaxation of the local structure around the Al dopant in Al-doped 4H-SiC(0001) was observed due to bond stretching.

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Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition

Cited by 24 publications

References 8 publications

Review of Silicon Carbide Processing for Power MOSFET

Review of Silicon Carbide Processing for Power MOSFET

Experiment on alleviating the bending of CVD-grown heavily Al-doped 4H-SiC epiwafer by codoping of N

X-ray Absorption Fine Structural Study of Atomic Structures and Chemical States of Dopants in 4H-SiC(0001)

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