Low‐Temperature (850°C) Silicon Selective Epitaxial Growth on  HF  ‐ Treated Si (100) Substrates Using SiH4 ‐ HCl ‐  H 2 Systems

Abstract

HF-treated substrates and silane (Sill4), hydrogen chloride (HC1), hydrogen (H2) systems were used for low-temperature (850~ silicon (Si) selective epitaxial growth (SEG). Conventional low-pressure chemical vapor deposition equipment was used for Si deposition. No Si nuclei were observed on SiO2 when measured by scanning electron microscopy after SEG. The {111} and {311} facet planes were observed by transmission electron microscopy. No defects were generated either at the epitaxial layer/substrate interface or the epitaxial layer/SiO2 sidewall on an atomic scale.

On the Role of Chlorine in Selective Silicon Epitaxy by Chemical Vapor Deposition

“…Implications of the etching study for selective epitaxial growth.-In a Si2H6-based process, the net gas phase decomposition reaction, although not thoroughly understood, is thought to be 512116(8) -2SiH2 + H [3] by Pares et al29 where SiH2 is considered the deposition species and has a high reactivity with the Si surface. The participation of Cl2 with this spontaneous reaction is not established but may be involved via the following reaction in the Si2H9 based system S1H2(9) + Cl2) -Si(s) + 2HCI(g) for deposition and the following in the etching regime Si,,, + 2HC1,,, * SiCl,,, + H , , , ,…”