The elastic coefficients for an arbitrary rectangular coordinate system are calculated as a function of direction cosines in the crystal. Young's modulus, shear modulus, and Poisson's ratio are defined in general and values tabulated for some of the more important directions in the crystal. Graphs of these moduli are also plotted as a function of crystal direction for orientations in the (100) and (110) planes as well as planes determined by the [110] direction and any perpendicular direction.

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The effect of dielectric constant and barrier height on the WKB modeled tunnel currents of MOS capacitors with effective oxide thickness of 2.0 nm is described. We first present the WKB numerical model used to determine the tunneling currents. The results of this model indicate that alternative dielectrics with higher dielectric constants show lower tunneling currents than SiO 2 at expected operating voltages. The results of SiO 2 /alternative dielectric stacks indicate currents which are asymmetric with electric field direction. The tunneling current of these stacks at low biases decreases with decreasing SiO 2 thickness. Furthermore, as the dielectric constant of an insulator increased, the effect of a thin layer of SiO 2 on the current characteristics of the dielectric stack increases. Semiconductor Research Corporation (SRC Contract 132).

High-frequency capacitance-voltage (C C C-V V V ) measurements have been made on ultrathin oxide metal-oxide-semiconductor (MOS) capacitors. The sensitivity of extracted oxide thickness to series resistance and gate leakage is demonstrated. Guidelines are outlined for reliable and accurate estimation of oxide thickness from C C C-V V V measurements for oxides down to 1.4 nm.

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