Low‐Temperature (900°C) Si Epitaxial Growth on Si (100) after  HF  Treatment

Abstract

HF‐normaltreated Si (100) substrates were used for low‐temperature (900°C) epitaxy. A conventional low‐pressure chemical vapor deposition (LPCVD) system was used for Si deposition. The stacking fault density (SFD) in the epitaxial layer drastically increased with the duration of the ultrapure water rinse time after HF dipping. Oxygen, fluorine, and carbon contaminants after HF treatment were measured by x‐ray photoelectron spectroscopy. The chemical bonding state of the residual carbon was related to the HF concentrations. For the 5% HF treatment, which corresponded to the optimum epitaxial condition, mainly C‒O was present.

Wet Chemical Processing of (0001)Si 6H‐SiC Hydrophobic and Hydrophilic Surfaces

“…The most C-O bonded oxygen was observed on the unrinsed surfaces. The presence of C-O bonded oxygen on the (0001) Si 6H-SiC surfaces was further supported by photoemission from the C 1s core level which revealed C 1s peaks at 282.8 eV, indicative of C-Si bonds, and at 284.7 eV, indicative of a mixture of C-H and C-O bonds, 19,20 as shown in Fig. 4.…”

“…4,5 The reasons for these two effects are the generation of increased densities of (i) electrically active defects which result in higher interface state densities, lower breakdown fields, and increased leakage currents [6][7][8][9][10][11][12][13] and (ii) structural defects including dislocations, twins, and stacking faults in the epitaxial layers. [14][15][16][17][18][19][20][21][22][23][24][25] Intensive efforts to understand the source(s) and nature of the surface contaminants accumulated during Si processing have resulted in the development of numerous wet and dry (ex situ and in situ) surface cleaning processes specifically optimized for Si surfaces. 1,2,[26][27][28][29][30][31][35][36][37][38][39][40] Numerous studies have also been concerned with the nature and removal of native oxides and other contaminants on SiC surfaces.…”

Cleaning of AlN and GaN surfaces

“…However, we conclude that the surface carbon is a mixture of C-H and C-O bonding. This is based on the work of Miyauchi et al 72 which showed that the C 1s core level for CH 2 , C-O, and O-CvO bonded carbon on silicon surfaces are located at 284.6, 286.3, and 288.4 eV, respectively. This is also supported by our AES/XPS data which showed a decrease in intensity and shift to lower binding energy for the C 1s after annealing at 500°C and our TPD data which showed desorption of C-O in the same temperature range.…”

Low‐Temperature (850°C) Silicon Selective Epitaxial Growth on HF ‐ Treated Si (100) Substrates Using SiH4 ‐ HCl ‐ H 2 Systems

“…It is necessary to reduce the H2 annealing temperature to apply the SEG technique for deep-submicron large scale integrations (LSIs). As previously reported (6,7), the substrate cleaning procedure, consisting of dipping in HF without an ultrapure water rinse, was effective for getting a native oxide-free surface before low-temperature (900~ epitaxial growth. This HF treatment was applied to substrate cleaning of low-temperature (850~ SEG.…”