Reactive ion etching (RIE) by CCl4 plasma of sputtered PbZr1-x Ti x O3 (PZT) thin film has been investigated. The etching rate of the as-deposited pyrochlore phase PZT is comparable to that of perovskite which was crystallized by 600°C annealing. Etching rate increased with increasing RF power and reached a plateau at 1.0 W/cm2. Highly anisotropic etching of PZT with little resist damage could be realized by reducing RF power.

HF‐normaltreated Si (100) substrates were used for low‐temperature (900°C) epitaxy. A conventional low‐pressure chemical vapor deposition (LPCVD) system was used for Si deposition. The stacking fault density (SFD) in the epitaxial layer drastically increased with the duration of the ultrapure water rinse time after HF dipping. Oxygen, fluorine, and carbon contaminants after HF treatment were measured by x‐ray photoelectron spectroscopy. The chemical bonding state of the residual carbon was related to the HF concentrations. For the 5% HF treatment, which corresponded to the optimum epitaxial condition, mainly C‒O was present.

Optical emission spectra were measured and the relationship between resistivity of SiN films which were deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD) and emission intensities from species excited by electron cyclotron resonance was clarified. With increasing microwave power of lowered reacting pressure or SiH4 gas flow rate, the light intensity from excited ions increased in comparison to the intensity from excited radicals. As a result of increasing excited ion density, the SiN film was condensed and the prismatic structure observed in low-resistivity film was not absent from high-resistivity film.

By using a microwave plasma deposition system in which distributions of applied magnetic fields can be varied, the effects of the ECR position and plasma species on deposition rate and deposited film quality of silicon oxide are studied. The following results are obtained: deposition rate increases when not only O2 but also SiH4 as a material gas are excited by ECR, and high-quality film equivalent to thermal SiO2 film can be formed when the ECR position is located close to the substrate. It is suggested that the process of forming high-quality film is related to highly excited ions transported to the substrate.

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