Our crystalline In–Ga–Zn oxide (IGZO) thin film has a c‐axis‐aligned crystal (CAAC) structure and maintains crystallinity even on an amorphous base layer. Although the crystal has c‐axis alignment, its a‐axis and b‐axis have random arrangement; moreover, a clear grain boundary is not observed. We fabricated a back‐channel‐etched thin‐film transistor (TFT) using the CAAC‐IGZO film. Using the CAAC‐IGZO film, more stable TFT characteristics, even with a short channel length, can be obtained, and the instability of the back channel, which is one of the biggest problems of IGZO TFTs, is solved. As a result, we improved the process of manufacturing back‐channel‐etched TFTs.

Oxide semiconductors as represented by InGaZnO have been developed and used for driving TFT of LCD. Since there have been discussions on comparison of oxide semiconductors with amorphous and/or poly-silicon which have been conventionally used for LCD, this paper will summarize pros and cons of each semiconductor material, deepen discussions for future developments, and clarify advantages of oxide semiconductors.

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The penumbra sign and a high CRP level support the diagnosis of osteomyelitis and may help to exclude the presence of a tumor.