The key transcription factors that control seed maturation, ABSCISIC ACID INSENSITIVE3 (ABI3) and FUSCA3 (FUS3), share homologous DNA-binding domains. Regulation of seed storage protein genes At2S3 and CRC by ABI3 and FUS3 was investigated using transgenic plants in which ABI3 and FUS3 could be ectopically induced by steroid hormones. Like ABI3, the presence of FUS3 led to expression of At2S3 and CRC in vegetative tissues. FUS3-mediated induction of CRC was completely dependent on exogenous abscisic acid (ABA), while At2S3 was weakly induced without ABA but strongly enhanced with ABA. This ABA dependency of FUS3-induced CRC and At2S3 expression was similar to that observed for ABI3. However, kinetic analysis revealed distinctions between the mechanisms of ABA-dependent CRC regulation by FUS3 or ABI3, and between target genes. While At2S3 activation by FUS3 was rapid, CRC induction by FUS3 in the presence of ABA, and by ABA followed by the presence of FUS3, took a significantly longer time (24-36 h). This suggested the involvement of an indirect mechanism requiring the ABA- and FUS3-dependent synthesis of intermediate regulatory factor(s). A chimeric protein composed of the FUS3 B3 domain, and a heterologous activation domain and nuclear localization signal exhibited a tight coupling with ABA regulation as observed for wild-type FUS3. Simultaneous induction of FUS3 and ABI3 did not result in the synergistic activation of CRC and At2S3. Based on these results, similarities and differences in the mechanisms of seed storage protein gene regulation by FUS3 and ABI3 are discussed.

Oxide semiconductors as represented by InGaZnO have been developed and used for driving TFT of LCD. Since there have been discussions on comparison of oxide semiconductors with amorphous and/or poly-silicon which have been conventionally used for LCD, this paper will summarize pros and cons of each semiconductor material, deepen discussions for future developments, and clarify advantages of oxide semiconductors.

We have developed a reflective type color TFT‐LCD using a novel plastic substrate. The display area is 4‐inch diagonal with 240×RGB×240 pixels (85ppi). This is the first report of a flat panel display driven by TFT array on a plastic substrate with PDA size and resolution. It shows that our development has stepped near to a mass production of the plastic TFT‐LCDs.

We have successfully developed 27inch 8K4K Liquid Crystal display by utilizing BCE IGZO (Back Channel Etched InGaZnO) transistor. Its pixel density is 326ppi like smartphone, but the screen size is 27inch, middle class desktop monitor size. And its LCD panel supports 120Hz driving. BCE IGZO-TFT realizes low resistance wiring material because of its low process temperature. Above reason, we can enlarge the screen size to desktop monitor class, remaining smartphone class fine resolution. Also this system contains HDR (High Dynamic Range) driving system, and wide color gamut, by IGZO transistor and Negative LC FFS pixel structure.

Digital Micro Shutter (DMS) Display based on MEMS design and process technologies provides wide color gamut, wide operating temperature range and low power consumption, compared with LCD and OLED which widely are used at the present time. Conventionally, DMS display was driven by LTPS TFT because of its high frequency operation. Oxide TFT as represented by IGZO has higher performance and reliability than a-Si TFT, as well as better productivity for large display than LTPS TFT. The IGZO oxide TFT can be applied to drive DMS display with good performance. It means that uniquely high performance and large size DMS displays can be produced without significant investment.In this paper, technologies and performance of 7 inch diagonal DMS display are explored.