Low-temperature amorphous boron nitride on Si0.7Ge0.3(001), Cu, and HOPG from sequential exposures of N2H4 and BCl3

Wolf, Steven; Edmonds, Mary; Sardashti, Kasra; Clemons, Max; Park, Junhong; Yoshida, N.; Lin, Dabin; Nemani, Srinivas; Yieh, Ellie; Holmes, Russell J.; Álvarez, Daniel; Kummel, Andrew C.

doi:10.1016/j.apsusc.2018.01.038

Cited by 14 publications

(14 citation statements)

References 28 publications

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“…The growth rate was determined by estimating the thickness of ALD-BN films from XPS peak attenuation of Si 2p binding state. , The details of the thickness calculation from XPS technique is explained in the Experimental Section. This growth rate is slightly lower than earlier reports with a growth rate of 0.07 nm/cycle for TEB and NH 3 , and 0.08 nm/cycle for BCl 3 and N 2 H 4 , respectively. This might be attributed to the high chemical reactivity of TEB and N 2 H 4 when compared to BCl 3 and NH 3 , respectively.…”

Section: Resultscontrasting

confidence: 74%

Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D Electronics

Lee

Ravichandran

Mohan

et al. 2020

ACS Appl. Mater. Interfaces

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Hexagonal boron nitride (h-BN) has been considered a promising dielectric for two-dimensional (2D) material-based electronics due to its atomically smooth and charge-free interface with an in-plane lattice constant similar to that of graphene. Here, we report atomic layer deposition of boron nitride (ALD-BN) using BCl 3 and NH 3 precursors directly on thermal SiO 2 substrates at a relatively low temperature of 600 °C. The films were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, and transmission electron microscopy wherein the uniform, atomically smooth, and nanocrystalline layered-BN thin film growth is observed. The growth rate is ∼0.042 nm/cycle at 600 °C, a temperature significantly lower than that of h-BN grown by chemical vapor deposition. The dielectric properties of the ALD-BN measured from Metal Oxide Semiconductor Capacitors are comparable with that of SiO 2 . Moreover, the ALD-BN exhibits a 2-fold increase in carrier mobility of graphene field effect transistors (G-FETs/ALD-BN/SiO 2 ) due to the lower surface charge density and inert surface of ALD-BN in comparison to that of G-FETs fabricated on bare SiO 2 . Therefore, this work suggests that the transfer-free deposition of ALD-BN on SiO 2 may be a promising candidate as a substrate for high performance graphene devices.

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Section: Resultscontrasting

confidence: 74%

Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D Electronics

Lee

Ravichandran

Mohan

et al. 2020

ACS Appl. Mater. Interfaces

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show abstract

“…Recently, BCl 3 has been used to couple with N 2 H 4 for growing BN via ALD. 68 The anhydrous N 2 H 4 precursor reacted with BCl 3 at lower temperature and enabled high BN stoichiometry with low oxygen and carbon impurities. However, the as-grown films were amorphous at 350 C, which might need a posttreatment for better crystallinity.…”

Section: -Bnhmentioning

confidence: 99%

Atomic Layer Deposition of Two-Dimensional Layered Materials: Processes, Growth Mechanisms, and Characteristics

Cai

Han

Wang

et al. 2020

Matter

118

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Since the discovery of graphene, there has been an ever-increasing interest in two-dimensional (2D) layered materials with exceptional properties. To this end, a variety of synthesis methods have been developed. However, it is still challenging to produce large-scale high-quality single-crystalline 2D materials. In this regard, atomic layer deposition (ALD) has recently shown great promise and has stimulated more and more research efforts, ascribed to its unique growth mechanism and distinguished capabilities to achieve nanoscale films with excellent uniformity, unrivaled conformality, and atomic-scale controllability. This review comprehensively summarizes recent progress on ALD for 2D atomic sheets, including 25 different materials and more than 80 ALD processes. This work highlights different technical routes to ALD, their precise controllability, and their underlying principles for 2D materials. It is expected that this work will help boost more research efforts for controllable growth of high-quality 2D materials via ALD.

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“…Compared to other hexagonal nitrides like AlN and GaN, the BN layers are very stable against buckling, and electronically they have little Fermi level pinning (FLP) at their interfaces . The weak interlayer van der Waals interaction between its layers allows thin-film devices to be made of only a few layers by chemical vapor deposition (CVD) , or atomic layer deposition techniques. − h-BN is a versatile material that can be used as a flat substrate for graphene, a gate dielectric, , and also in spintronic devices. − …”

Section: Introductionmentioning

confidence: 99%

Ab Initio Study of Hexagonal Boron Nitride as the Tunnel Barrier in Magnetic Tunnel Junctions

Guo

Robertson

2021

ACS Appl. Mater. Interfaces

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Two-dimensional hexagonal boron nitride (h-BN) is studied as a tunnel barrier in magnetic tunnel junctions (MTJs) as a possible alternative to MgO. The tunnel magnetoresistance (TMR) of such MTJs is calculated as a function of whether the interface involves the chemi- or physisorptive site of h-BN atoms on the metal electrodes, Fe, Co, or Ni. It is found that the physisorptive site on average produces higher TMR values, whereas the chemisorptive site has the greater binding energy but lower TMR. It is found that alloying the electrodes with an inert metal-like Pt can induce the preferred absorption site on Co to become a physisorptive site, enabling a higher TMR value. It is found that the choice of physisorptive sites of each element gives more Schottky-like dependence of their Schottky barrier heights on the metal work function.

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Low-temperature amorphous boron nitride on Si0.7Ge0.3(001), Cu, and HOPG from sequential exposures of N2H4 and BCl3

Cited by 14 publications

References 28 publications

Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D Electronics

Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D Electronics

Atomic Layer Deposition of Two-Dimensional Layered Materials: Processes, Growth Mechanisms, and Characteristics

Ab Initio Study of Hexagonal Boron Nitride as the Tunnel Barrier in Magnetic Tunnel Junctions

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