Low-temperature and high-performance ZnSnO thin film transistor activated by lightwave irradiation

Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnOxdopant layer

“…6) and subsequently leads to a higher electron concentration. 20 The above evidence explains the higher μ and lower V th of the Z/S/Z TFT compared with those of the Z/Z/Z TFT. A high-performance TFT is successfully fabricated using the Z/S/Z stacked semiconductor layer.…”

“…The corresponding crystalline phases are rutile structures of SnO 2 (110), (101) and (211) phases. 20,65,66 The grain size of the (110) phase calculated using the Scherrer equation is 11.3 nm. 67 The S/S/S layer shows a polycrystalline structure.…”

“…This finding reveals that the deposited Al electrode has good contact with the ZTO film. 20,28 The Al x O y interfacial layer can prevent the spreading of Al from the Al electrode to the Z/S/Z layer. Moreover, the formation of Al x O y may cause an increase in the oxygen-vacancy content in the upper ZTO layer.…”

“…Compared with IGZO, ZTO is nontoxic and fewer elements are required, which leads to a higher process compatibility, higher simplicity and lower manufacturing cost. 11,20…”

Atmospheric Pressure Solvothermal Synthesis of Nanoscale SnO2 and Its Application in Microextrusion Printing of a Thick-Film Chemosensor Material for Effective Ethanol Detection

“…Tin dioxide has been attracting scientific attention all over the world for decades, both as an individual material [1][2][3][4] and as a component of more complex substances, especially transparent electrodes, including ITO [5,6], SnGaO [7], ZnSnO (ZTO) [8,9], SnO 2 :F (FTO) [10], Al-Sn-Zn-O (ATZO) [11], SnO 2 @N [12] and others. This material is a wide-bandgap semiconductor (E g ~3.…”