Low-temperature annealing of polycrystalline Si/sub 1-x/Ge/sub x/ after dopant implantation

Low temperature oxide formation is an important process in the fabrication of thin-film transistors (TFT) used in active-matrix liquid crystal displays. However, low temperature oxide is prone to have defects at the SiO2/polycrystalline–SiGe interfaces. We have recently developed a novel rf (radio frequency) plasma oxidation method for polycrystalline SiGe (poly-SiGe) materials. The poly-SiGe wafers are oxidized in an oxygen rf plasma with the samples electrically floating. That is, the sample voltage is the same as the sheath potential of the floating wall and is always negative with respect to the bulk of the plasma since electrons have higher mobility than ions. The slightly negative potential on the wafers attracts low energy oxygen ions from the plasma and the resulting damage on the wafers is thus lower than that induced by the more commonly used and energetic electron cyclotron resonance (ECR) source. No deliberate heating is applied during oxidation since the samples are heated spontaneously by the plasma, but the temperature is measured to be below 100 °C throughout the entire process. The oxidation rate is comparable to that of ECR plasma oxidation. Depth profiles are acquired by Auger electron spectroscopy and the interfaces are examined by x-ray photoelectron spectroscopy. The n-channel metal oxide silicon device fabricated on the as-grown gate oxide shows good electrical characteristics. The process is thus compatible with inexpensive large-area, low-temperature fabrication of TFTs on glass substrates.

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Electrical properties of in situ phosphorus- and boron-doped polycrystalline SiGeC films

Anteney

Parker

Ashburn

et al. 2000

Applied Physics Letters

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The sheet resistance, effective carrier concentration, and Hall mobility of in situ boron-and phosphorus-doped polycrystalline Si 0.82Ϫy Ge 0.18 C y films are presented for carbon contents between 0% and 4%. Phosphorus and boron doping levels of 4ϫ10 19 and 2ϫ10 20 cm Ϫ3 were achieved for the n-and p-type layers, respectively, and remained largely unaffected by carbon content. The phosphorus-doped films showed a dramatic increase in sheet resistivity and a corresponding drop in effective carrier concentration and Hall mobility. In contrast, the boron-doped films showed only a minor increase in resistivity. This is attributed to interstitial carbon increasing the defect density and also shifting the defect energy levels at the grain boundaries towards the valence band. This causes an increase in the grain-boundary energy barrier in n-type layers, but leaves the p-type layers largely unaffected.

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Low-temperature annealing of polycrystalline Si/sub 1-x/Ge/sub x/ after dopant implantation

Cited by 7 publications

References 10 publications

Low temperature doping of poly-SiGe films with boron by co-sputtering

Low temperature doping of poly-SiGe films with boron by co-sputtering

Floating low-temperature radio-frequency plasma oxidation of polycrystalline silicon-germanium

Electrical properties of in situ phosphorus- and boron-doped polycrystalline SiGeC films

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