Low Temperature, Beam-Orientation-Dependent, Lattice-Plane-Independent, and Damage-Free Oxidation for Three-Dimensional Structure by Neutral Beam Oxidation

Abstract

To fabricate a metal oxide semiconductor field-effect transistor (MOSFET) with a three-dimensional (3D) structure, several problems arise in the conventional thermal oxidation (TO) process, such as leakage current, shape nonuniformity, stress concentration, and the dependence of the oxidation rate on the lattice plane of Si. To overcome these problems, we propose low-temperature (<300 C) neutral beam oxidation (NBO) as an alternative oxidation process. We found that an oxide film grown by NBO (NBO film) exhibits performance characteristics of a gate dielectric film that are as high as those of thermal oxide films in terms of the relationship between equivalent oxide thickness (EOT) and leakage current. The rate of NBO is also independent of the lattice plane of Si, while the oxidation is beam orientation dependent. Therefore, growing oxide films by NBO is advantageous, in that the method can be applied to gate dielectric films for the 3D fin structure of field-effect transistors (FinFETs) and surrounding gate transistors (SGTs).

Control of optical bandgap energy and optical absorption coefficient by geometric parameters in sub-10 nm silicon-nanodisc array structure

“…The poly-Si layer was prepared using molecular beam epitaxy with a controlled deposition rate of 0.05 nm min −1 followed by annealing in argon atmosphere at 600 • C for 16 h. By in situ monitoring the poly-Si deposition thickness we could precisely control the thickness of the Si-ND. Then a 3 nm SiO 2 layer was fabricated using our developed neutral-beam oxidation process at a low temperature of 300 • C as a surface oxide (hereafter called 'NBO SiO 2 ') [23]. Second, a new bio-template of a 2D array of Li-Dps (a cage-shaped protein that has a 4.5 nm diameter iron oxide core in the cavity) molecules was formed through directed self-assembly on the NBO SiO 2 surface, as shown in figure 1(e).…”

Transparent ZnO resistive switching memory fabricated by neutral oxygen beam treatment

“…The concept of this process, in which the kinetic energy of neutral oxygen (O) particles enables the formation of high-quality oxide films at low temperature, is expected to be applicable to the oxidation of various materials. In fact, surface oxidation using the O beam can be applied for the formation of silicon (Si) oxide, [12][13][14][15] germanium oxide, 16,17) gallium arsenide oxide 18) and aluminum oxide. 19) In addition, the formation of a tantalum oxide film and improvement of a ZnO film characteristic were reported to obtain high-quality metallic oxide films as an ionic transport layer, which was applied for the fabrication of RRAM devices, resulting in the typical bipolar resistive switching.…”

Asymmetric Gate-oxide Thickness Four-terminal FinFETs Fabricated using Low-Temperature and Atomically Flat interface Neutral-Beam Oxidation Process

“…Also, the electric characteristic of SiO 2 films fabricated by NBO at low temperature (< 300 °C) is almost the same as that of films fabricated by TO. 9 In this study, we fabricated 3T-FinFET and symmetric/asymmetric T ox 4T-FinFETs and evaluated their performances by using the simple NBO process. Figure 2 shows the schematic process flow of 3T-and 4T-FinFETs.…”