Low-temperature characteristics of In&lt;inf&gt;0.7&lt;/inf&gt;Ga&lt;inf&gt;0.3&lt;/inf&gt;As PHEMTs

Son, Seungwoo; Park, Jung Ho; Baek, Ji Min; Kim, Jin Su; Kim, Do-Kywn; Kim, Dae-Hyun

doi:10.1109/lec.2016.7578922

2016 Lester Eastman Conference (LEC) 2016

DOI: 10.1109/lec.2016.7578922

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Low-temperature characteristics of In<inf>0.7</inf>Ga<inf>0.3</inf>As PHEMTs

Seungwoo Son

Jung Ho Park

Ji Min Baek

et al.

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2022

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Physics-Based Analytical Channel Charge Model of In _x Ga_1-xAs/In_0.52Al_0.48As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion Regimes

Jeong

Park

et al. 2022

IEEE J. Electron Devices Soc.

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This paper presents a physics-based analytical channel charge model for indium-rich InxGa1-xAs/In0.52Al0.48As quantum-well (QW) field-effect transistors (FETs) that is applicable from the subthreshold to strong inversion regimes. The model requires only seven physical/geometrical parameters, along with three transition coefficients. In the subthreshold regime, the conduction bands (EC) of all regions are flat with finite and symmetrical QW configurations. Since the Fermi-level (EF) is located far below EC, the two-dimensional electron-gas density (n2-DEG) should be minimal and can thus be approximated from Maxwell-Boltzmann statistics. In contrast, the applied gate bias lowers the EC of all structures in the inversion regime, yielding band-bending of an In0.52Al0.48As insulator and InxGa1-xAs QW channel. The dependency of the energy separation between EF and EC on the surface of the InxGa1-xAs QW channel upon VGS enables construction of the charge-voltage behaviors of InxGa1-xAs/In0.52Al0.48As QW FETs. To develop a unified, continuous and differentiable areal channel charge density (Qch) model that is valid from the subthreshold to strong inversion regimes, the previously proposed inversion-layer transition function is further revised with three transition coefficients of   and  in this work.To verify the proposed approach, the results of the proposed model are compared with those of not only the numerically calculated Qch from a one-dimensional (1D) Poisson-Schrödinger solver, but also the measured gate capacitance of a fabricated In0.7Ga0.3As QW metal-insulator-semiconductor FET with large gate length, yielding excellent agreement between the simulated and measured results.

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Physics-Based Analytical Channel Charge Model of In _x Ga_1-xAs/In_0.52Al_0.48As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion Regimes

Jeong

Park

et al. 2022

IEEE J. Electron Devices Soc.

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Low-temperature characteristics of In<inf>0.7</inf>Ga<inf>0.3</inf>As PHEMTs

Cited by 1 publication

References 7 publications

Physics-Based Analytical Channel Charge Model of In _x Ga_1-xAs/In_0.52Al_0.48As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion Regimes

Physics-Based Analytical Channel Charge Model of In _x Ga_1-xAs/In_0.52Al_0.48As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion Regimes

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Low-temperature characteristics of In<inf>0.7</inf>Ga<inf>0.3</inf>As PHEMTs

Cited by 1 publication

References 7 publications

Physics-Based Analytical Channel Charge Model of In x Ga1-x As/In0.52Al0.48As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion Regimes

Physics-Based Analytical Channel Charge Model of In x Ga1-x As/In0.52Al0.48As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion Regimes

Contact Info

Product

Resources

About

Physics-Based Analytical Channel Charge Model of In _x Ga_1-xAs/In_0.52Al_0.48As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion Regimes

Physics-Based Analytical Channel Charge Model of In _x Ga_1-xAs/In_0.52Al_0.48As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion Regimes