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Long-channel In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As quantum-well (QW) metaloxide-semiconductor field-effect-transistors (MOSFETs) on InP substrate have been fabricated and characterised. The fabricated device with L g = 4 μm exhibits excellent maximum transconductance (g m_max) in excess of 0.48 mS/μm at V DS = 0.95 V, together with reasonably good electrostatic integrity of drain-induced-barrier-lowering < 40 mV/V and subthreshold-swing <100 mV/decade. Besides, the effective mobility (μ n_eff) of the same device has been extracted, revealing that the device in this work yields excellent μ n_eff = 6960 cm 2 /V-s at room temperature. To the knowledge of the authors, the value of μ n_eff in this work is the highest in any surface-channel InGaAs MOSFET technology.

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