Low-temperature chemical vapor deposition of highly doped n-type epitaxial Si at high growth rate

Nguyen, Ngoc Duy; Loo, Roger; Caymax, Matty

doi:10.1016/j.apsusc.2008.02.194

Cited by 4 publications

(1 citation statement)

References 10 publications

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“…There are two routes to enhance growth rates: one is the use of N2 as carrier gas instead of H2 [7]. Another one is the use of high order silane precursor gases such as trisilane (Si3H8) [8][9][10]. High growth rates at growth temperatures below 600 °C for both routes have been demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Si1−xGex growth using Si3H8 by low temperature chemical vapor deposition

et al. 2010

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Low temperature epitaxial growth of group-IV alloys is a key process step to realize the advanced Si-based devices. In order to keep high growth rate below 600 °C, trisilane (Si3H8) was used for their growth as an alternative Si precursor gas. Then, we compared the use of Si3H8 versus SiH4 for Si1-xGex growth in H2 and N2 as carrier gas by low temperature chemical vapor deposition. By using Si3H8 and controlling GeH4 flow rate, Si1-xGex growth with high growth rate and wide range of Ge concentration has been achieved compared to SiH4-based process. The growth rate and Ge concentration in Si1-xGex with Si3H8 grown at 600 °C ranged from 11 to 74nm/min and from 0 to 40%, respectively. The obtained growth rates with Si3H8 are between 1.5 and 6 times higher than for SiH4 at a given growth condition. Si3H8-based in-situ B-and C-doped Si1-xGex growth with high growth rate was also demonstrated.

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Section: Introductionmentioning

confidence: 99%

Si1−xGex growth using Si3H8 by low temperature chemical vapor deposition

et al. 2010

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Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane based chemical vapor deposition

You¹,

Decoutere²,

Nguyen

et al. 2012

Thin Solid Films

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Growth and electrical properties of in situ phosphorus-doped polycrystalline silicon films using Si3H8 and PH3

Kim

Jang

Kim

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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In situ phosphorus-doped polycrystalline silicon (polysilicon) films grown on silicon oxide layers using trisilane (Si3H8) and phosphine (PH3) as precursors are investigated as a function of the Si3H8/PH3 gas flow ratio and the growth temperature. At a high flow rate for Si3H8 in the temperature range of 600–700 °C, the deposition process is controlled by the rate of desorption of hydrogen molecules on the surface, which has an activation energy of 1.13 eV. For a low Si3H8 flow rate at growth temperatures >650 °C, however, the deposition is limited by the diffusion of Si3H8 gas to the surface. The presence of phosphorus decreases the crystallization temperature of the polysilicon layers during growth. In addition, the ratio of phosphorus incorporated into the polysilicon decreases with increasing growth temperature because of the increase in the growth rate. The resistivity of the phosphorus-doped polysilicon films decreases with increasing deposition temperature at the same phosphorus concentration, indicating that the use of a high growth temperature results in an enhancement in the activation of phosphorus in the polysilicon films during growth.

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Low-temperature chemical vapor deposition of highly doped n-type epitaxial Si at high growth rate

Cited by 4 publications

References 10 publications

Si1−xGex growth using Si3H8 by low temperature chemical vapor deposition

Si1−xGex growth using Si3H8 by low temperature chemical vapor deposition

Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane based chemical vapor deposition

Growth and electrical properties of in situ phosphorus-doped polycrystalline silicon films using Si3H8 and PH3

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