Low-temperature chemical vapor deposition processes and dielectrics for microelectronic circuit manufacturing at IBM

Cote, D.; Nguyen, S.; Cote, W.; Pennington, S.; Stamper, A. K.; Podlesnik, D. V.

doi:10.1147/rd.394.0437

Cited by 37 publications

(17 citation statements)

References 76 publications

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“…[7] Of these techniques, MOCVD offers the most flexible approach with the capacity of depositing coatings on large surface areas with high film uniformity, good deposition control, high deposition rates, and excellent conformal step coverage on device structures with dimensions below 2 lm, important in microelectronic applications. [8,9] Precursors that can be used in MOCVD have to fulfill specific requirements: they should have a high vapor pressure; stability in the gas phase during the transport process; and a suitable decomposition interval. The decomposition should lead to stable gaseous products to avoid contamination of the films.…”

Section: Introductionmentioning

confidence: 99%

“…[17] For this method, however, the precursor should be stable for long periods in solution with solvents such as tetrahydrofuran or ethanol. Fluorinated silver(I) carboxylates of type (R' 3 P) m AgO 2 CR (R' = Me, Et, Ph; m = 1,2,3; R = C n F 2n+1 ; n = 2, 3,6,7,8,9) have been investigated extensively, but general connections between precursor design and suitability are not obvious. [18,19] Triphenylphosphine silver aryloxide complexes have also been studied as potential CVD precursors, but the results were disappointing.…”

Section: Introductionmentioning

confidence: 99%

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CVD with Tri‐ⁿbutylphosphine Silver(I) Complexes: Mass Spectrometric Investigations and Depositions

Haase¹,

Kohse‐Höinghaus²,

Bahlawane³

et al. 2005

Chemical Vapor Deposition

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Tri-n butylphosphine silver(I) complexes were synthesized and characterized with respect to their suitability for the CVD of silver thin films. The volatility and thermal stability of these complexes were investigated using temperature-programmed and in-situ mass spectrometry (MS). Complexes with smaller carboxylate ligands showed superior long-term stability and had the advantage of evaporation without decomposition. Careful examination of the fragments detected during evaporation and in a CVD reactor allowed us to propose the gas-phase decomposition mechanisms of some potentially suitable silver precursors. Deposition experiments in a cold-wall CVD reactor using selected precursors resulted in smooth and conductive silver coatings.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

CVD with Tri‐ⁿbutylphosphine Silver(I) Complexes: Mass Spectrometric Investigations and Depositions

Haase¹,

Kohse‐Höinghaus²,

Bahlawane³

et al. 2005

Chemical Vapor Deposition

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“…Both silicon dioxide and silicon nitride have been deposited as interlayer dielectric materials at relatively low temperature using plasma enhanced chemical deposition (PECVD). 8 Silicon dioxide mostly functions as an electrical insulating layer while silicon nitride provides environmental protection from sodium ions. Our study pursued another deposition technique, RF sputtering.…”

Section: Temperature Characteristic Of Sputteringmentioning

confidence: 99%

Planarization of a CMOS die for an integrated metal MEMS

2003

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This paper describes a planarization procedure to achieve a flat CMOS die surface for the integration of a MEMS metal mirror array. The CMOS die for our device is 4 mm x 4 mm and comes from a commercial foundry. The initial surface topography has 0.9 µm bumps from the aluminum interconnect patterns that are used for addressing the individual micro mirror array elements. To overcome the tendency for tilt error in the planarization of the small CMOS die, our approach is to sputter a thick layer of silicon nitride (2.2 µm) at low temperature and to surround the CMOS die with dummy pieces to define the polishing plane. The dummy pieces are first lapped down to the height of the CMOS die, and then all pieces are polished. This process reduces the 0.9 µm height of the bumps to less than 25 nm.

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“…4 Such problems do not occur in the case of noncubic BN, believed a good candidate dielectric material for sub-halfmicron microelectronics technology. 5 Since the work of Kester et al, 6 several researchers have reported cross-sectional high-resolution transmission electron microscopy ͑HRTEM͒ studies of the structure of BN films obtained by ion beam-assisted PVD methods [7][8][9][10] and radio frequency ͑rf͒ bias magnetron sputtering. 11 These studies revealed a multilayered structure of the films, composed of an initial few-nanometer-thick a-BN layer next to the Si substrate, followed by an h-BN layer with the c-axis parallel to the substrate surface, and finally by a c-BN layer.…”

Section: Y Maniettementioning

confidence: 99%

Microstructure of highly oriented, hexagonal, boron nitride thin films grown on crystalline silicon by radio frequency plasma-assisted chemical vapor deposition

Andújar

Bertrán

Maniette

1996

Journal of Applied Physics

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We present a high-resolution electron microscopy study of the microstructure of boron nitride thin films grown on silicon ͑100͒ by radio-frequency plasma-assisted chemical vapor deposition using B 2 H 6 ͑1% in H 2 ͒ and NH 3 gases. Well-adhered boron nitride films grown on the grounded electrode show a highly oriented hexagonal structure with the c-axis parallel to the substrate surface throughout the film, without any interfacial amorphous layer. We ascribed this textured growth to an etching effect of atomic hydrogen present in the gas discharge. In contrast, films grown on the powered electrode, with compressive stress induced by ion bombardment, show a multilayered structure as observed by other authors, composed of an amorphous layer, a hexagonal layer with the c-axis parallel to the substrate surface and another layer oriented at random. © 1996 American Institute of Physics. ͓S0021-8979͑96͒04422-2͔In recent years, an important research activity has been directed to the preparation of boron nitride ͑BN͒ thin films by several low-pressure physical vapor deposition ͑PVD͒ and chemical vapor deposition ͑CVD͒ methods, to be used as protective coatings and as dielectric layers in many optical, mechanical, and electronic applications. [1][2][3] This is due to the outstanding properties of BN, such as optical transparency, chemical inertness, hardness, high electrical resistivity, high thermal conductivity, and low dielectric losses. In thin film form, BN can crystallize in various phases depending on preparation conditions. Among them are the hexagonal ͑h-BN͒ structure, similar to that of graphite but insulating, the cubic ͑c-BN͒ structure analogous to that of diamond, and an amorphous ͑a-BN͒ structure. Successful deposition techniques of c-BN, considered as a promising material for tribological and high-temperature electronics applications, all make use of ion bombardment during deposition, thought to be an essential condition. However, this involves a high compressive stress, which limits the film thickness and often leads to poor adherence or even cracking and delamination. 4 Such problems do not occur in the case of noncubic BN, believed a good candidate dielectric material for sub-halfmicron microelectronics technology. 5 Since the work of Kester et al.,6 several researchers have reported cross-sectional high-resolution transmission electron microscopy ͑HRTEM͒ studies of the structure of BN films obtained by ion beam-assisted PVD methods 7-10 and radio frequency ͑rf͒ bias magnetron sputtering. 11 These studies revealed a multilayered structure of the films, composed of an initial few-nanometer-thick a-BN layer next to the Si substrate, followed by an h-BN layer with the c-axis parallel to the substrate surface, and finally by a c-BN layer. The preferred orientation of the intermediate h-BN layer is thought to be a result of the increasing biaxial compressive stress in the film, induced by ion bombardment. 12 Without bias or ion assistance, it has been shown that the hexagonal layer grows with the c-axis norma...

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Low-temperature chemical vapor deposition processes and dielectrics for microelectronic circuit manufacturing at IBM

Cited by 37 publications

References 76 publications

CVD with Tri‐ⁿbutylphosphine Silver(I) Complexes: Mass Spectrometric Investigations and Depositions

CVD with Tri‐ⁿbutylphosphine Silver(I) Complexes: Mass Spectrometric Investigations and Depositions

Planarization of a CMOS die for an integrated metal MEMS

Microstructure of highly oriented, hexagonal, boron nitride thin films grown on crystalline silicon by radio frequency plasma-assisted chemical vapor deposition

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Low-temperature chemical vapor deposition processes and dielectrics for microelectronic circuit manufacturing at IBM

Cited by 37 publications

References 76 publications

CVD with Tri‐nbutylphosphine Silver(I) Complexes: Mass Spectrometric Investigations and Depositions

CVD with Tri‐nbutylphosphine Silver(I) Complexes: Mass Spectrometric Investigations and Depositions

Planarization of a CMOS die for an integrated metal MEMS

Microstructure of highly oriented, hexagonal, boron nitride thin films grown on crystalline silicon by radio frequency plasma-assisted chemical vapor deposition

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Product

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CVD with Tri‐ⁿbutylphosphine Silver(I) Complexes: Mass Spectrometric Investigations and Depositions

CVD with Tri‐ⁿbutylphosphine Silver(I) Complexes: Mass Spectrometric Investigations and Depositions