Low-temperature conducting performance of transparent indium tin oxide/antimony tin oxide electrodes

Koo, Bon‐Ryul; Bae, Ju-Won; Ahn, Hyo‐Jin

doi:10.1016/j.ceramint.2017.02.006

Cited by 31 publications

(12 citation statements)

References 31 publications

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“…ITO was successfully formed by doping Sn into In 2 O 3 , which is consistent with other studies. [26,27] Figure 3a,b shows AFM images of 100 nm ITO on the GaAs substrate. The average roughness (Ra) was 3.11 nm.…”

Section: Resultsmentioning

confidence: 99%

Indium Tin Oxide with High Carrier‐Collection Capacity and Radiation Resistance for GaInP Solar Cell

Dai

Long

Sun

et al. 2021

Physica Status Solidi (a)

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The crystal structure, light transmittance, and contact resistivity of transparent conducting indium-tin-oxide (ITO) films for a III-V solar cell are studied. The optical transparency of ITO can reach 96% under appropriate annealing conditions. ITO and n þ -GaAs can form Ohmic contacts having a lower contact resistance than those formed with ITO and n þ -GaInP. A specially designed solar cell structure is fabricated to grow the ITO film as the front electrode and thus prevent oxidation of the AlInP window layer. Three different GaInP solar cells with pure ITO and ITO/metal grid electrode structures are designed and compared. The results indicate that the ITO electrode has good carrier-collection ability. After irradiation with 1 MeV energy electrons with an electron fluence of 1 Â 10 15 e cm À2 , the remaining factor of the GaInP solar cells with a pure ITO electrode is %98%. The results indicate that ITO films have significant application potential in space solar cell manufacturing.

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Section: Resultsmentioning

confidence: 99%

Indium Tin Oxide with High Carrier‐Collection Capacity and Radiation Resistance for GaInP Solar Cell

Dai

Long

Sun

et al. 2021

Physica Status Solidi (a)

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“…For the other side, the EC materials with ion storage property complementary to that of the opposite side are used. The three‐layer structure of cathodic EC material/electrolyte/anodic EC material is covered by two transparent conducting oxides (TCO), such as F‐doped SnO 2 , Sn‐doped In 2 O 3 , and Sb‐doped SnO 2 , which could be electrically conductive and optically transparent . The operation of the ECDs is possible when ions are inserted or extracted in the EC materials via an electrolyte by applied voltage to transparent conducting layers.…”

Section: Electrochromic Devices (Ecds)mentioning

confidence: 99%

“…The three-layer structure of cathodic EC material/electrolyte/anodic EC material is covered by two transparent conducting oxides (TCO), such as F-doped SnO 2 , Sn-doped In 2 O 3 , and Sb-doped SnO 2 , which could be electrically conductive and optically transparent. [11][12][13] The operation of the ECDs is possible when ions are inserted or extracted in the EC materials via an electrolyte by applied voltage to transparent conducting layers. At this time, the electrons balance on charge of ion-containing EC materials; hence, they are strongly responsible for the performances of ECDs.…”

Section: Introductionmentioning

confidence: 99%

Research Impact on Emerging Quantum Materials for Electrochromic Applications

Koo

Ahn

2019

Israel Journal of Chemistry

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Electrochromic devices (ECDs), which can dynamically vary optical properties under applied specific voltage, have been actively studied for use in applications requiring human comfort and energy efficiency (i. e. smart windows and electronic displays). In order to improve the electrochromic (EC) performances, many researchers have been using nanomaterials. In this respect, in the present study, we highlight some of valuable examples using WO3 from unique nanostructures to quantum dots (QDs) and discuss the core relationship between nanostructuring and EC performances. In particular, the present study proposes major impact on the novel approach using QDs to upgrade technical value and application of ECDs.

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“…The best resistivity of ITO film deposited by sputtering was reported as low as 1.2 × 10 −4 Ω cm [70]. As an alternative to vacuum-based deposition, recently much efforts have been focused on production of solution-based deposition for high-performance ITO films using various approaches such as nanomaterials-based [71][72][73][74][75], aqueous metal salts solution [76], combustion synthesis [77,78], and advanced annealing techniques (microwave annealing [79] and ultraviolet laser annealing [80]. A summary of properties of ITO films prepared by various solution-based deposition processes is given in Table 3.…”

Section: Indium-tin-oxide (Ito)mentioning

confidence: 99%

Low-Temperature Solution-Processable Functional Oxide Materials for Printed Electronics

Tue¹

2018

Green Electronics

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Over a decade since the first printed oxide transistor has been reported, printed oxide electronics is now becoming emerging technologies for realization of flexible, large-scale, low-cost electronic devices and systems. This chapter summarizes recent progress in the development of low-temperature solution-processable functional oxide materials and devices, and it also addresses critical challenges for the fundamental understanding and practical implementation of complex oxides in devices. The first part of this chapter gives an overview of the development of functional oxide inks such as semiconductors, conductors, and dielectrics. The second part discusses high-resolution printing technologies and some applications of printed electronics to exemplify their potential.

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Low-temperature conducting performance of transparent indium tin oxide/antimony tin oxide electrodes

Cited by 31 publications

References 31 publications

Indium Tin Oxide with High Carrier‐Collection Capacity and Radiation Resistance for GaInP Solar Cell

Indium Tin Oxide with High Carrier‐Collection Capacity and Radiation Resistance for GaInP Solar Cell

Research Impact on Emerging Quantum Materials for Electrochromic Applications

Low-Temperature Solution-Processable Functional Oxide Materials for Printed Electronics

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