Low-temperature die attach for power components: Cu-Sn-In solid-liquid interdiffusion bonding

Emadi, Fahimeh; Liu, S.; Klami, A.; Tiwary, Nikhilendu; Vuorinen, Vesa; Paulasto‐Kröckel, Mervi

doi:10.1109/asdam55965.2022.9966765

Cited by 2 publications

(1 citation statement)

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“…However, it is essential for further studies to design the metallization stack containing Co and to ensure the reliability of Cu-Sn-In/Co SLID interconnects. Taking this into consideration and drawing upon our previous studies [15], [40], [41], we have designed the SLID metallization stacks for Cu-Sn-In. In addition, we assessed the reliability of the Cu-Sn-In/Co SLID interconnects, using this novel SLID system, through a high-temperature storage (HTS) test, a thermal shock (TS) test, and tensile tests, comparing the results with Cu-Sn/Co SLID interconnects as a reference.…”

Section: Introductionmentioning

confidence: 99%

Novel low-temperature interconnects for 2.5/3D MEMS integration: demonstration and reliability

Emadi,

Vuorinen,

Liu

et al. 2024

Preprint

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In response to the evolving demands of microelectromechanical system (MEMS) integration, aiming to achieve high-performance electronic products, innovative interconnect solutions are becoming essential. The interconnects must possess key features, including the capability for miniaturization, low processing temperatures, and the ability to maintain a stable microstructure with optimized electrical, mechanical, and thermomechanical properties. To meet these demands, this study designed a novel Cu-Sn-based solid-liquid interdiffusion (SLID) interconnect. The study involved the implementation of a metallization stack, incorporating Co as a layer to interact with low-temperature Cu-Sn-In SLID and form intermetallic compounds (IMCs). Since Cu6(Sn,In)5 forms at a lower bonding temperature than other phases commonly observed in the Cu-Sn-In system, the study aimed to develop interconnects comprising a stable single-phase (Cu,Co)6(Sn,In)5. Bonding conditions were established for the Cu-Sn-In/Co system and the Cu-Sn/Co system as a reference. Thorough assessments of their thermomechanical reliability were conducted through hightemperature storage (HTS), thermal shock (TS), and tensile tests. The Cu-Sn-In/Co system emerged as a reliable low-temperature solution with the following key attributes: 1) a reduced bonding temperature compared to the Cu-Sn SLID interconnects, 2) the absence of the Cu3Sn phase and resulting void-free interconnects, and 3) high thermomechanical reliability, particularly following thermal annealing after bonding.

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Section: Introductionmentioning

confidence: 99%