Low-temperature fabrication of high performance indium oxide thin film transistors

Meng, You; Liu, Guoxia; Liu, Ao; Song, Huijun; Hou, Yang; Shin, Byoungchul; Shan, Fukai

doi:10.1039/c5ra04145g

Cited by 78 publications

(71 citation statements)

References 43 publications

(51 reference statements)

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“…In addition, a negative shift in threshold voltage is observed with increasing the annealing temperature for both solvents (Table ). This phenomena have been reported and explained by many groups, while annealing IGZO film at lower temperatures, it possess a large amount of hydroxyl groups on film surface. The hydroxyl group plays the vital role as charge trapper due to its polar nature.…”

Section: Resultssupporting

confidence: 61%

The Impact of Solvents on the Performances of Solution‐Processed Indium Gallium Zinc Oxide Thin‐Film Transistors Using Nitrate Ligands

et al. 2019

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Herein, solution‐processed indium gallium zinc oxide (IGZO) thin‐film transistor (TFT) is fabricated utilizing metal nitrates as precursors, and the impact of nitrate ions in different solvents on the performances of IGZO TFT is demonstrated. During IGZO film fabrication, the nitrogen in nitrate species actually dopes into the film in the fashion of different chemical states depending on different solvents. When IGZO precursors dissolve in deionized water (DIW), due to the high polarity of the solvent, metal nitrates are completely dissociated, leading to the conversion of nitrates to nitrides in IGZO film. This nitrogen decreases the density of the interface trap states, thus improving the characteristics of the IGZO TFT. In contrast, when using 2‐methoxyethanol (2‐ME) as the solvent, nitrogen mainly forms nitrogen oxide and acts as a trap density that leads to the degradation of the device performances. By increasing the annealing temperature of IGZO film, nitrogen oxide can convert to metal nitride, resulting in enhanced device performance. The IGZO TFT fabricated using DIW as a solvent with 300 °C annealing temperature exhibits the saturation mobility of 2.5 cm2 V−1 s−1 and Ion/off ratio of >106.5. Herein, a step is made toward the solvent effect on the performance of solution‐processed oxide TFT.

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Section: Resultssupporting

confidence: 61%

The Impact of Solvents on the Performances of Solution‐Processed Indium Gallium Zinc Oxide Thin‐Film Transistors Using Nitrate Ligands

et al. 2019

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“…Rather than using organic based solvents (e.g., 2‐methoxyethanol and dimethylformamide), an ecofriendly WI route was proposed by Hwang et al to produce oxide semiconductors by introducing deionized water as the solvent . For conventional organic based precursors, constant thermal energy is required to break existing chemical bonds in specific organic species . In contrast, the WI route enables lower temperature fabrication by simply extending the annealing time (Figure b) .…”

Section: Low Temperature Routes For Flexible and Printed High κ Oxidementioning

confidence: 99%

Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and Circuits

et al. 2018

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The electronic functionalities of metal oxides comprise conductors, semiconductors, and insulators. Metal oxides have attracted great interest for construction of large-area electronics, particularly thin-film transistors (TFTs), for their high optical transparency, excellent chemical and thermal stability, and mechanical tolerance. High-permittivity (κ) oxide dielectrics are a key component for achieving low-voltage and high-performance TFTs. With the expanding integration of complementary metal oxide semiconductor transistors, the replacement of SiO with high-κ oxide dielectrics has become urgently required, because their provided thicker layers suppress quantum mechanical tunneling. Toward low-cost devices, tremendous efforts have been devoted to vacuum-free, solution processable fabrication, such as spin coating, spray pyrolysis, and printing techniques. This review focuses on recent progress in solution processed high-κ oxide dielectrics and their applications to emerging TFTs. First, the history, basics, theories, and leakage current mechanisms of high-κ oxide dielectrics are presented, and the underlying mechanism for mobility enhancement over conventional SiO is outlined. Recent achievements of solution-processed high-κ oxide materials and their applications in TFTs are summarized and traditional coating methods and emerging printing techniques are introduced. Finally, low temperature approaches, e.g., ecofriendly water-induced, self-combustion reaction, and energy-assisted post treatments, for the realization of flexible electronics and circuits are discussed.

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“…Ling Liu, Shujian Chen, Xiaoci Liang, and Yanli Pei* DOI: 10.1002/aelm.201900550 layer, the reported mobility is usually lower than 10 cm 2 V −1 s −1 . [3,4] The defects induced by solution process make the In 2 O 3 TFT work under trap limited conductive (TLC) model with lower field effect mobility. Another important issue to be faced is the stability of In 2 O 3 TFT.…”

Section: Solution Processed Alino/in 2 O 3 Heterostructure Channel Thmentioning

confidence: 99%

Solution Processed AlInO/In₂O₃ Heterostructure Channel Thin Film Transistor with Enhanced Performance

Liu

Chen

Liang

et al. 2019

Adv Elect Materials

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Thin film transistors (TFTs) with solution processed AlInO/In2O3 heterostructure channels are demonstrated with enhanced performance. TFTs with single AlInO channels with various Al concentrations are used for comparison. Appropriate concentrations of Al in AlInO single layer can slightly improve the TFT performance. For the AlInO layer with Al concentration higher than 20%, the resistance is so large that no typical transfer characteristics are observed. In contrast, the overall performances are greatly improved using the AlInO/In2O3 heterostructure channel. High field effect mobility is achieved greater than 40 cm2 V−1 s−1 with a sub threshold slope of 0.7 V decade−1 and on/off ratio of 107 from the heterostructure TFT with a AlInO (30%) top layer. The mobility is affected by the tunnel contact series resistance, which can be modulated by the thickness of the AlInO layer. The enhanced field effect mobility is attributed to the formation of 2D electron gas confined at the AlInO/In2O3 interface, which results in a bulk accumulation effect. Finally, improved positive bias stress stability is obtained by inducing the AlInO top layer with a strong AlO bond. The as investigated results show a very promising future for oxide thin film transistor performance enhancements via heterostructure engineering.

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Low-temperature fabrication of high performance indium oxide thin film transistors

Abstract: In this study, indium oxide (In2O3) thin-film transistors (TFTs) were fabricated by a fully-solution process at low temperature.

Cited by 78 publications

References 43 publications

The Impact of Solvents on the Performances of Solution‐Processed Indium Gallium Zinc Oxide Thin‐Film Transistors Using Nitrate Ligands

The Impact of Solvents on the Performances of Solution‐Processed Indium Gallium Zinc Oxide Thin‐Film Transistors Using Nitrate Ligands

Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and Circuits

Solution Processed AlInO/In₂O₃ Heterostructure Channel Thin Film Transistor with Enhanced Performance

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Low-temperature fabrication of high performance indium oxide thin film transistors

Abstract: In this study, indium oxide (In2O3) thin-film transistors (TFTs) were fabricated by a fully-solution process at low temperature.

Cited by 78 publications

References 43 publications

The Impact of Solvents on the Performances of Solution‐Processed Indium Gallium Zinc Oxide Thin‐Film Transistors Using Nitrate Ligands

The Impact of Solvents on the Performances of Solution‐Processed Indium Gallium Zinc Oxide Thin‐Film Transistors Using Nitrate Ligands

Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and Circuits

Solution Processed AlInO/In2O3 Heterostructure Channel Thin Film Transistor with Enhanced Performance

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Solution Processed AlInO/In₂O₃ Heterostructure Channel Thin Film Transistor with Enhanced Performance