2019
DOI: 10.1002/adem.201901053
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The Impact of Solvents on the Performances of Solution‐Processed Indium Gallium Zinc Oxide Thin‐Film Transistors Using Nitrate Ligands

Abstract: Herein, solution‐processed indium gallium zinc oxide (IGZO) thin‐film transistor (TFT) is fabricated utilizing metal nitrates as precursors, and the impact of nitrate ions in different solvents on the performances of IGZO TFT is demonstrated. During IGZO film fabrication, the nitrogen in nitrate species actually dopes into the film in the fashion of different chemical states depending on different solvents. When IGZO precursors dissolve in deionized water (DIW), due to the high polarity of the solvent, metal n… Show more

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Cited by 10 publications
(12 citation statements)
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“…This also introduces slight differences in transistor performance for the pristine In 2 O 3 based devices used as controls (vide infra). [46] Moreover, since PVP-NH 2 is insoluble in the processing solvents that are compatible with the MO precursors (H 2 O, alcohols, etc. ), PVP-BOC was used as an in situ PVP-NH 2 precursor to fabricate In 2 O 3 :PVP-NH 2 blend films with, nominally, ≈0-2 wt% of PVP-NH 2 .…”
Section: Electron Doping Capacity Of Amino-polymers and In 2 O 3 :Pol...mentioning
confidence: 99%
“…This also introduces slight differences in transistor performance for the pristine In 2 O 3 based devices used as controls (vide infra). [46] Moreover, since PVP-NH 2 is insoluble in the processing solvents that are compatible with the MO precursors (H 2 O, alcohols, etc. ), PVP-BOC was used as an in situ PVP-NH 2 precursor to fabricate In 2 O 3 :PVP-NH 2 blend films with, nominally, ≈0-2 wt% of PVP-NH 2 .…”
Section: Electron Doping Capacity Of Amino-polymers and In 2 O 3 :Pol...mentioning
confidence: 99%
“…Research on solution-based oxide TFTs has used diverse approaches and the results have improved very quickly ( Table 2). Achievements in solution-based oxide TFTs over the past decade can be summarized as follows: (1) low-temperature process technology by the synthesis of new precursors and the control of thermodynamic reaction [20][21][22][23][24][25][26][27]; (2) lowtemperature or high µ using various post-processing methods [28][29][30][31][32][33]; (3) high-performance implementation according to changes in material composition by using spin coating, spray pyrolysis, inkjet, slot-die coating, and e-jet [7,22,[34][35][36][37][38].…”
Section: Metal Oxide Tftsmentioning
confidence: 99%
“…14 To address these limitations, previous research has focused on reducing metal nitrate ion residues by employing highly polar deionized water (DIW) as an alternative solvent. 15 The organic residues also impact the characteristics of phototransistors. Nevertheless, there has been limited research devoted to enhancing the performance of IGZO-based phototransistors by adjusting the quantity of organic residues through solvent engineering.…”
Section: Introductionmentioning
confidence: 99%