Low-Temperature Materials and Thin Film Transistors for Flexible Electronics

Sazonov, Andrei; Striakhilev, Denis; Lee, Czang-Ho; Nathan, Arokia

doi:10.1109/jproc.2005.851497

Cited by 88 publications

(28 citation statements)

References 18 publications

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“…Fig. 3(b) also shows a steeper S in the devices with a thinner channel, just as predicted by (5) and (6). The S values were extracted by using the conventional definition as the inverse slope of the log(I DS )-V GS curves in the subthreshold regime.…”

Section: Resultssupporting

confidence: 63%

“…A low leakage current (I OFF ) and a steep subthreshold swing (S) standing for high switching performance are required to achieve high transconductance, and these enable a low voltage swing to achieve the required on-off current ratio (I ON /I OFF ) for high-speed and low power consumption [4]. However, the quality of the silicon films being achieved on these substrates is severely constrained by materials and substrate process limitations, resulting in amorphous and nano-or microcrystalline materials [5], [6]. The disorder in the material introduces a wide range of defects in the bandgap, which range from states caused by Manuscript bond angle and bond length variations, coordination defects in amorphous materials, and grain boundary defects in microcrystalline materials [7], severely degrading the transistor's switching performance.…”

Section: Introductionmentioning

confidence: 99%

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Improving Switching Performance of Thin-Film Transistors in Disordered Silicon

Guo

Ishii

Silva

2008

IEEE Electron Device Lett.

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Abstract-The silicon integrated electronics on glass or plastic substrates attracts wide interests. The design, however, depends critically on the switching performance of transistors, which is limited by the quality of silicon films due to the materials and substrate process constraints. Here, the ultrathin channel device structure is proposed to address this problem. In a previous work, the ultrathin channel transistor was demonstrated as an excellent candidate for ultralow power memory design. In this letter, theoretical analysis shows that, for an ultrathin channel transistor, as the channel becomes thinner, stronger quantum confinement can induce a marked reduction of OFF-state leakage current (I OFF ), and the subthreshold swing (S) is also decreased due to stronger control of channel from the gate. Experimental results based on the fabricated nanocrystalline silicon thin-film transistors prove the theoretical analysis. For the 2.0-nm-thick channel devices, I ON /I OFF ratio of more than 10 11 can be achieved, which can never be obtained for normal thick channel transistors in disordered silicon.

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Section: Resultssupporting

confidence: 63%

Section: Introductionmentioning

confidence: 99%

Improving Switching Performance of Thin-Film Transistors in Disordered Silicon

Guo

Ishii

Silva

2008

IEEE Electron Device Lett.

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“…3 This is because low thermal energy of reactive radicals in RF-PECVD at low deposition temperature leads to a film with low mass density and poor electrical properties. 4,5 Furthermore, the resulting solar cell is quickly degraded by the photo-generated defects. [6][7][8] Although by using thinner absorber layer in an a-Si solar cell, researchers can reduce the photo-induced degradation to 15% after 1000-h exposure with one-sun irradiance at 50 C, they need to employ a more sophisticated light trapping scheme in the device to maintain the PV efficiency.…”

mentioning

confidence: 99%

Inductively coupled plasma grown semiconductor films for low cost solar cells with improved light-soaking stability

Shen

Shieh

Huang

et al. 2011

Applied Physics Letters

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We investigate the performance of a single-junction amorphous Si (a-Si) solar cell fabricated with inductively coupled plasma (ICP) deposition technique. The high-density plasma resulting from high dissociation capacity of ICP enables good-quality hydrogenated Si films to be synthesized at low temperatures. High-density ICP also promotes the diffusion of reactive radicals on substrates and forms a-Si:H films with low defect density (∼3 × 1015 cm−3). We demonstrate single-junction a-Si solar cells with a conversion efficiency of 9.6% and improved light-soaking stability. This low thermal-budget thin-film technique could open up the feasibility of efficient thin film solar cells on flexible substrates.

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“…21 -24 However, to date, inorganic semiconductors have achieved the highest and most stable TFT performance. 25 Recent results have provided encouraging results based on solution deposition of inorganic materials rather than requiring the standard vacuum deposition methods. Because of the relatively mature theoretical understanding of inorganic semiconductor devices, and the diffi culty of obtaining organic -based TFTs with adequate device characteristics, new ways to solution -deposit and fabricate inorganic semiconductors have received increasing attention, as will be explored in subsequent chapters.…”

Section: Importance Of Solution Processingmentioning

confidence: 99%