Low-temperature method for enhancing sputter-deposited HfO2 films with complete oxidization

Tsai, Chih Tsung; Chang, Ting Chang; Liu, Po–Tsun; Yang, Po Chih; Kuo, Yue; Kin, Kon-Tsu; Chang, Pei Lin; Huang, Fon-Shan

doi:10.1063/1.2753762

Cited by 36 publications

(13 citation statements)

References 13 publications

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“…[1][2][3][4][5] It is required to address the performance gap between logic and storage for future systems on chip. Among emerging memory technologies, [6][7][8][9][10][11][12] the memristor has the potential to become the ultimate next-generation nonvolatile memory due to its attributes of simple structure, high speed, and high endurance. [13][14][15][16][17][18][19][20][21][22] In particular, the memristor exhibits ultra-high switching speed because the resistive switching behaviors are dominated by variation of several atoms in the device.…”

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confidence: 99%

Atomic-level quantized reaction of HfO_x memristor

et al. 2013

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confidence: 99%

Atomic-level quantized reaction of HfO_x memristor

et al. 2013

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“…The supercritical CO 2 (SCCO 2 ) fluid technology was used to improve the dielectric properties and performance of various thin film transistors (TFTs), such as hydrogenated amorphous-silicon TFTs and ZnO TFTs [134][135][136][137][138]. Therefore, the effect of SCCO 2 treatment on RRAM was worthy to evaluate for low temperature process [139][140][141][142][143][144][145][146].…”

Section: New Low Temperature Process Technology: Supercritical Fluidsmentioning

confidence: 99%

Physical and chemical mechanisms in oxide-based resistance random access memory

Chang¹,

Chang²,

Tsai³

et al. 2016

Nano Online

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In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO 2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

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“…It also exhibits a high potential of use as insulating layer in the capacitive elements of many memory devices such as dynamic randomaccess memories (DRAM) [2]. Two-dimensional hafnium dioxide films have been prepared on planar substrates using various depositing methods such as physical vapor deposition [3][4][5], chemical vapor deposition (CVD) [6], and atomic layer deposition (ALD) [7]. The latter method is very promising, since it allows growing high-quality films on large-scale surfaces with an accurate control of the thickness due to the self-limiting chemical surface reaction taking place during the deposition process, leading to an atomic layer-by-layer control of the growth [8].…”

Section: Introductionmentioning

confidence: 99%