Low-temperature optical absorption in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml

Pearah, P. J.; Masselink, W. T.; Klem, John F.; Henderson, T.; Morkoç̌, H.; Litton, C. W.; Reynolds, D. C.

doi:10.1103/physrevb.32.3857

Cited by 55 publications

(19 citation statements)

References 28 publications

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“…16 Beyond x ¼ 0.25, there is a sharp increase of the binding energy, similar to the ionization energy behavior of deep donors in this alloy system. 17,18 It is known that the exciton binding energy in a planar quantum well can be $4 times that in bulk material.…”

mentioning

confidence: 51%

GaAs-based high temperature electrically pumped polariton laser

Baten

Bhattacharya

Frost

et al. 2014

Applied Physics Letters

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Strong coupling effects and polariton lasing are observed at 155 K with an edge-emitting GaAs-based microcavity diode with a single Al0.31Ga0.69As/Al0.41Ga0.59As quantum well as the emitter. The threshold for polariton lasing is observed at 90 A/cm2, accompanied by a reduction of the emission linewidth to 0.85 meV and a blueshift of the emission wavelength by 0.89 meV. Polariton lasing is confirmed by the observation of a polariton population redistribution in momentum space and spatial coherence. Conventional photon lasing is recorded in the same device at higher pump powers.

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mentioning

confidence: 51%

GaAs-based high temperature electrically pumped polariton laser

Baten

Bhattacharya

Frost

et al. 2014

Applied Physics Letters

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“…In spite of the nearly same energy of P and P 0 , those lines have different origins as confirmed by the TRPL (Section 2). Taking account of the donor energy in GaAs [24], P 0 is attributed to the exciton bound to donor [25,26]. Line B is attributed to the donor valence band transition.…”

Section: Low-temperature Photoluminescencementioning

confidence: 99%

Time-resolved photoluminescence of delta-doped AlGaAs/GaAs heterostructures

Meftah

Ajlani

Aloulou

et al. 2008

Journal of Luminescence

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“…A well-defined structure was observed in the whole temperature region he studied (4-290 K) due to the photoexcitation of indirect free excitons with the emission or absorption of momentum-conserving phonons typical for indirect transitions. 82,85 OPTICAL PROPERTIES: BULK GaAs AND RELATED MATERIALS Optical absorption in A^Ga^As alloy has been studied by Monemar et al, 87 Dingle et al, 88 Lifshitz et al, 89 and Pearah et al 90 Monemar et al 87 have obtained the values of a for relatively pure Al x Ga,. t As alloy (x=0.3-0.9) at temperatures 4 and 293 K. The samples were grown by liquid-phase epitaxy on GaAs substrates.…”

Section: Near or Below The Fundamental Absorption Edgementioning

confidence: 99%

“…Pearah et al 90 have also made a detailed study of optical absorption in the Al,Ga,.,As alloy system for the entire composition range x=0-1.0 at 3 K. The epilayer were grown by molecular-beam epitaxy on GaAs substrates. The AlAs mole fractions in the direct-gap region were determined from optical measurements, while those in the indirect-gap region were estimated from growth rates and absorption data.…”

Section: Near or Below The Fundamental Absorption Edgementioning

confidence: 99%

OPTICAL PROPERTIES: BULK GaAs AND RELATED MATERIALS

Adachi¹

1994

GaAs and Related Materials

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This chapter is concerned with the basic optical properties of bulk semiconductors such as refraction, absorption, and dispersion as they result from lattice bivronic and electronic excitations in the semiconductors. The complex dielectric function e(co) = 6i(co) + ie^co)can now describe the optical properties of the medium at all photon energies E=rico. Real (e,) and imaginary (e^) parts of the dielectric function are connected by the well-known Kramers-Kronig (KK) relations: 1The complex refractive index n*(co)=n(to)+ik(a)) is given by n*(co)=n(co)+ik(co) = [e^co) + i^co)]" 2 (11.3)where n(co) is the ordinary (real) refractive index and k(w) is the extinction coefficient, also called the attenuation index. The optical constants n(co) and k(oo) are real and positive numbers and can be determined by optical measurements. From Eqs. (11.1) and 336 GaAs and Related Materials Downloaded from www.worldscientific.com by UNIVERSITY OF BIRMINGHAM on 08/24/15. For personal use only. e(co) u)TO-o) 2 -i(OY V J (11.8) GaAs and Related Materials Downloaded from www.worldscientific.com by UNIVERSITY OF BIRMINGHAM on 08/24/15. For personal use only. GaAs and Related Materials Downloaded from www.worldscientific.com by UNIVERSITY OF BIRMINGHAM on 08/24/15. For personal use only. * ( E) = I dS _ (11.23) s |V k (E-E)| E ,-E .. E the joint-density-of-states function measuring the product density of full and empty states of equal energy difference. The e^E) can, then, be simply written as ^^IP^PUE) (11-24) GaAs and Related Materials Downloaded from www.worldscientific.com by UNIVERSITY OF BIRMINGHAM on 08/24/15. For personal use only. ID , is expressed by a c c E GaAs and Related Materials Downloaded from www.worldscientific.com by UNIVERSITY OF BIRMINGHAM on 08/24/15. For personal use only.

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Low-temperature optical absorption inAlxGa1−

Cited by 55 publications

References 28 publications

GaAs-based high temperature electrically pumped polariton laser

GaAs-based high temperature electrically pumped polariton laser

Time-resolved photoluminescence of delta-doped AlGaAs/GaAs heterostructures

OPTICAL PROPERTIES: BULK GaAs AND RELATED MATERIALS

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