Low-temperature processing of solution-derived ferroelectric thin films

Malič, Barbara; Suzuki, Hisao

doi:10.2109/jcersj2.122.1

Cited by 9 publications

(3 citation statements)

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“…Although significant efforts have been devoted to the low-temperature processing of ferroelectric oxide thin films using different techniques, the limited success obtained at the moment (UV-assisted annealing 5 6 7 8 9 10 , laser annealing process 11 12 , microwave irradiation 13 14 , seeding approach 15 16 , process engineering 17 − 19 or most recent heterogeneous photocatalysis 20 ) reveals the big complexity of this task. Special attention has been paid to chemical solution deposition (CSD) methods since – among other benefits such as comparatively low cost, compositional control, and high-throughput fabrication – they offer the particular advantage of tailoring the solution chemistry to attain a low-temperature fabrication of these materials 21 22 23 24 . Although coating of 3D structures can also be obtained from liquid precursors by mist deposition 25 , most electronic devices with commercial success fabricated by CSD 26 , display a planar ferroelectric-capacitor configuration that finds important applications in multiple fields as sensors (e.g., infrared detectors), transducers (e.g., fingerprint scanners), actuators (e.g., ultrasonic micromotors), or non-volatile memories (e.g., smart cards).…”

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confidence: 99%

Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelectronic devices

Bretos

Jiménez

Tomczyk

et al. 2016

Sci Rep

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Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound ─ morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT) ─ are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 °C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 μC cm−2 is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of ~90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics.

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confidence: 99%

Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelectronic devices

Bretos

Jiménez

Tomczyk

et al. 2016

Sci Rep

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“…6 The use of seed layers is also a popular strategy for lowering processing temperatures, thus resulting in ecological and economic benefits associated with the reduced energy consumption, as well as technological integration on temperature-sensitive substrates. 7 The seed layer can be also deposited by CSD. In the case of PbTiO 3 , the chemistry of the precursor solution can be essentially very similar to the one used for the fabrication of the PZT layer.…”

Section: Introductionmentioning

confidence: 99%

Growth of {100}-oriented lead zirconate titanate thin films mediated by a safe solvent

et al. 2021

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“…[11,12] Besides, most of the ferroelectric oxide compositions contain volatile elements (e.g., lead, bismuth, alkalis) that are partially volatized during the thermal treatment, leading to a possible loss in the stoichiometry of the oxide and to the formation of undesired non-ferroelectric phases. [13,14] All this contribute to a damage of the ferroelectric response of the film. These handicaps could be overcome with the use of organic ferroelectrics that can be processed at relatively lower However, they present fabrication and performance limitations.…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature Solution Approaches for the Potential Integration of Ferroelectric Oxide Films in Flexible Electronics

Bretos

Jiménez

Ricote

et al. 2020

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

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This Technical Review presents the state-of-the-art in low-temperature chemical solution deposition (CSD) processing of ferroelectric oxide thin films. To achieve the integration of multifunctional crystalline oxides with flexible and semiconductor devices is today crucial to meet the demands of coming electronic devices. Hence, amorphous metal oxide semiconductors have been recently introduced in thin film electronics. However, their benefits are limited compared to those of ferroelectric oxides, which intrinsic multifunctionality would make possible multiple operations in the device. But, ferroelectricity is linked to a non centrosymmetric crystal structure that is achieved, in general, at high temperatures, over 500C. These temperatures exceed the thermal stability of flexible polymer substrates and are not compatible with those permitted in the current fabrication routines of Si-based devices. In addition, the manufacturing of flexible electronic devices not only calls for low-temperature fabrication processes but also for deposition techniques that scale easily to the large areas required in flexible devices. In this regard, CSD processes are the best positioned today to integrate metal oxide thin-films with flexible substrates, as a large-area, low-cost, high-throughput fabrication technique. Here, we review the progress made in the last years in fabricating at low temperature crystalline ferroelectric oxide thin films via CSD methods, highlighting the recent work of our group in the preparation of ferroelectric oxide thin films on flexible polyimide substrates.

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Low-temperature processing of solution-derived ferroelectric thin films

Cited by 9 publications

References 84 publications

Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelectronic devices

Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelectronic devices

Growth of {100}-oriented lead zirconate titanate thin films mediated by a safe solvent

Low-Temperature Solution Approaches for the Potential Integration of Ferroelectric Oxide Films in Flexible Electronics

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