Low temperature pulsed plasma deposition. Part I—a new technique for thin film deposition with complete gas dissociation

Methods of deposition of hydrogenated amorphous silicon for device applications

“…At the start of each modulation pulse, a sharp peak in optical emission is seen. Similar SiH * emission peaks in pulsed plasmas have been found by Scarsbrook et al [516] and Howling et al [321]. The sharp peak was claimed to be caused by a pulse of highenergy electrons.…”

Effect of pulse parameters on the deposition rate of hydrogenated amorphous silicon in a modified pulsed plasma discharge

“…In one case very high power ͑Ϸ50 kW͒ pulses are used and source gases admitted to the discharge reactor in short bursts and pumped away by very high capacity pumps. 4 The initial results appear to be very encouraging though the equipment complexity increases many folds. In the more common pulsed plasma growth experiments, rf generators of moderate power, working at 6 -13.56 MHz are amplitude modulated by a square wave.…”

Pulsed Plasma Polymerization of Perfluorocyclohexane

“…For average powers below 7 W, pulsing of the PFCH glow discharge produces a plasma polymer network with a greater C F 2 content and less cross-linked ( C −CF n ) carbon than those found for corresponding CW experiments. One possible explanation for the drop in cross-linking during pulsing could be the lower substrate temperature, since a significant advantage of pulsing the fluorocarbon glow discharge is that extensive heating of the reactor walls and substrate can be avoided . The plasma sheath voltage decays rapidly, leading to a time-averaged reduction in the number and energy of positive ions bombarding the surface; hence, the substrate experiences less heating.…”