Low-temperature re-oxidation of near-interface defects and voltage stability in SiC MOS capacitors

Yin, Zhipeng; Yang, Chao; Zhang, Fanglong; Su, Yan; Qin, Fuwen; Wang, Dejun

doi:10.1016/j.apsusc.2020.147312

Cited by 15 publications

(6 citation statements)

References 56 publications

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“…In this work, although only 800 • C-1000 • C has been investigated, we infer that such trend can be slightly extended to higher temperature (∼ 1100 • C or more), because the reaction mechanism does not change. While for the case of POA at < 800 • C, although the oxide growth that degrades the interface nearly stops, the POA effect on gate stack improvement also becomes quite limited in short time span such as 5 min in this study, which is consistent with the results by Yin et al and Kita et al [33,34] Therefore, by considering the above-mentioned tradeoffs, we believe a critical temperature T c should exist. For the POA temperature lower than T c , the removal rate of residual carbon increases with the increase of temperature, while for the POA temperature higher than T c , it decreases with the increase of temperature, even with a net increase of residual carbon.…”

Section: -3supporting

confidence: 90%

“…Compared with SiO 2 , the interfacial SiO x C y transition layer is a carbon-rich one, therefore the breakdown field of the interfacial transition layer should be lower, because residual carbon is the major origin of interface traps. [32,33] Moreover, from the aspect of POA temperature dependence, as shown in Fig. 4(b), the sample annealed at 800 • C shows the longest T bd when compared with the as-oxidized one and the ones annealed at higher temperature.…”

Section: -3mentioning

confidence: 89%

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Impact of O₂ post oxidation annealing on the reliability of SiC/SiO₂ MOS capacitors*

Liu¹,

Hao²,

Wang³

et al. 2021

Chinese Phys. B

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The effects of dry O2 post oxidation annealing (POA) at different temperatures on SiC/SiO2 stacks are comparatively studied in this paper. The results show interface trap density (D it) of SiC/SiO2 stacks, leakage current density (J g), and time-dependent dielectric breakdown (TDDB) characteristics of the oxide, are affected by POA temperature and are closely correlated. Specifically, D it, J g, and inverse median lifetime of TDDB have the same trend against POA temperature, which is instructive for SiC/SiO2 interface quality improvement. Moreover, area dependence of TDDB characteristics for gate oxide on SiC shows different electrode areas lead to same slope of TDDB Weibull curves.

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Section: -3supporting

confidence: 90%

Section: -3mentioning

confidence: 89%

Impact of O₂ post oxidation annealing on the reliability of SiC/SiO₂ MOS capacitors*

Liu¹,

Hao²,

Wang³

et al. 2021

Chinese Phys. B

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“…On the other hand, the thickness and relative Si and C element contents of the interface-transition region decrease with the increase in O 3 oxidation temperature in a range of 1100 • C-1200 • C. The interface-transition region of the sample obtained by O 3 oxidation at 1200 • C is the thinnest, and its thickness is approximately 0.4 nm less than that of the samples formed by dry oxidation at the same oxidation temperature. Given that a thin interface-transition region and low Si and C element contents in the interfacetransition region can reduce the existence possibility of Si-and C-related defects in the interface-transition region, [42] we infer that O 3 oxidation can suppress the formation of defects in the interface-transition region.…”

Section: Element Distribution Near Sic/sio 2 Interfacementioning

confidence: 84%

Ozone oxidation of 4H-SiC and flat-band voltage stability of SiC MOS capacitors

et al. 2022

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We investigated the effect of ozone (O3) oxidation of silicon carbide (SiC) on the flat-band voltage (V fb ) stability of SiC metal-oxide-semiconductor (MOS) capacitors. SiC MOS capacitors were produced by O3 oxidation, and their V fb stability under frequency variation, temperature variation and bias temperature stress was evaluated. Secondary ion mass spectroscopy (SIMS), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) indicated that O3 oxidation can adjust the element distribution near SiC/SiO2 interface, improve SiC/SiO2 interface morphology and inhibit the formation of near-interface defects, respectively. In addition, we elaborated the underlying mechanism through which O3 oxidation improves the V fb stability of SiC MOS capacitors by using the measurement results and O3 oxidation kinetics.

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“…For III-N nitride surfaces, also carbon impurities have been considered as one dominant defect type [234,235] but the nitride surfaces are not yet understood as well as other III-V surfaces. Similarly the SiC surfaces need future studies to establish the most probable defects, which include C-C bonding [236][237][238] even if C-C bond signal is not clear in XPS, but here it is worth to remind the limited XPS resolution and compare it to an expected C-C density.…”

Section: Which Interface Defects Do Cause Extra Electron Levels In Th...mentioning

confidence: 99%

Bridging the gap between surface physics and photonics

Laukkanen,

Punkkinen,

Kuzmin

et al. 2024

Rep. Prog. Phys.

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Use and performance criteria of photonic devices increase in various application areas such as information and communication, lighting, and photovoltaics. In many current and future photonic devices, surfaces of a semiconductor crystal are a weak part causing significant photo-electric losses and malfunctions in applications. These surface challenges, many of which arise from material defects at semiconductor surfaces, include signal attenuation in waveguides, light absorption in light emitting diodes, non-radiative recombination of carriers in solar cells, leakage (dark) current of photodiodes, and light reflection at solar cell interfaces for instance. To reduce harmful surface effects, the optical and electrical passivation of devices has been developed for several decades, especially with the methods of semiconductor technology. Because atomic scale control and knowledge of surface-related phenomena have become relevant to increase the performance of different devices, it might be useful to enhance the bridging of surface physics to photonics. Toward that target, we review some evolving research subjects with open questions and possible solutions, which hopefully provide example connecting points between photonic device passivation and surface physics. One question is related to the properties of the wet chemically cleaned semiconductor surfaces which are typically utilized in device manufacturing processes, but which appear to be different from crystalline surfaces studied in ultrahigh vacuum by physicists. In devices, a defective semiconductor surface often lies at an embedded interface formed by a thin metal or insulator film grown on the semiconductor crystal, which makes the measurements of its atomic and electronic structures difficult. To understand these interface properties, it is essential to combine quantum mechanical simulation methods. This review also covers metal-semiconductor interfaces which are included in most photonic devices to transmit electric carriers to the semiconductor structure. Low-resistive and passivated contacts with an ultrathin tunnelling barrier are an emergent solution to control electrical losses in photonic devices.

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Low-temperature re-oxidation of near-interface defects and voltage stability in SiC MOS capacitors

Cited by 15 publications

References 56 publications

Impact of O₂ post oxidation annealing on the reliability of SiC/SiO₂ MOS capacitors*

Impact of O₂ post oxidation annealing on the reliability of SiC/SiO₂ MOS capacitors*

Ozone oxidation of 4H-SiC and flat-band voltage stability of SiC MOS capacitors

Bridging the gap between surface physics and photonics

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Low-temperature re-oxidation of near-interface defects and voltage stability in SiC MOS capacitors

Cited by 15 publications

References 56 publications

Impact of O2 post oxidation annealing on the reliability of SiC/SiO2 MOS capacitors*

Impact of O2 post oxidation annealing on the reliability of SiC/SiO2 MOS capacitors*

Ozone oxidation of 4H-SiC and flat-band voltage stability of SiC MOS capacitors

Bridging the gap between surface physics and photonics

Contact Info

Product

Resources

About

Impact of O₂ post oxidation annealing on the reliability of SiC/SiO₂ MOS capacitors*

Impact of O₂ post oxidation annealing on the reliability of SiC/SiO₂ MOS capacitors*