Low-temperature selective epitaxy by ultrahigh-vacuum chemical vapor deposition from SiH4 and GeH4/H2

Racanelli, M.; Greve, D. W.

doi:10.1063/1.104998

Cited by 49 publications

(15 citation statements)

References 11 publications

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“…Once the thin film had fully covered the SiO 2 substrate, the reaction became faster on the resultant Ge surface and the grains began to grow. 21 In strong contrast to previous reports with other CVD systems, [11][12][13]19,20 our results suggest that HDPCVD can achieve the Ge deposition on the SiO 2 substrates with nearly no incubation time. This might be due to the fact that the high density of H ions will slightly etch the SiO 2 surface and partially reduce SiO 2 into Si or SiO x .…”

contrasting

confidence: 81%

“…7,8 However, for thin film transistor ͑TFT͒ applications, successful Ge thin film deposition on SiO 2 substrates using chemical vapor deposition ͑CVD͒ techniques has not been demonstrated so far due to the extremely long incubation times needed. [9][10][11][12][13][14][15] In the present study, we demonstrate the deposition of polycrystalline Ge films directly onto fully SiO 2 covered Si substrates with nearly no incubation time by using high-density plasma CVD ͑HD-PCVD͒ technique at 400°C. X-ray photoelectron spectroscopy ͑XPS͒ and Auger electron spectroscopy ͑AES͒ analyses show that the deposition of very pure Ge thin films can be achieved without significantly detectable O and C incorporations.…”

mentioning

confidence: 98%

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Low-Temperature Growth of Polycrystalline Ge Films on SiO2 Substrate by HDPCVD

Yang

Shieh

Hsu

et al. 2005

Electrochemical and Solid-State Letters

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Pure and high-quality polycrystalline Ge films have been deposited directly onto fully SiO 2 covered substrates by high-density plasma chemical vapor deposition ͑HDPCVD͒ system. Only a tiny amount of O and C near the surface has been observed from X-ray photoelectron spectroscopy and Auger electron spectroscopy data, which may come from surface oxidation and contamination. Very pure Ge composition has been achieved in the bulk of the films. The cubic structure with primarily ͑111͒, ͑220͒, and ͑311͒ orientations of the Ge films is mainly composed of fine grains and can be unambiguously identified from X-ray diffraction patterns. Furthermore, successful Ge film depositions with nearly no incubation time are demonstrated using a mixture of GeH 4 /H 2 as process gas at 400°C. Thickness vs. time analysis was performed by high-resolution transmission electron microscopy. The HDPCVD technique used was able to provide a simple, powerful, and reliable approach in the fabrication of polycrystalline Ge thin film transistors.Ge has attracted more and more attention due to its wide applications in ultralarge scale integration ͑ULSI͒ and booming nanotechnologies. Ge/Si and SiGe/Si heterostructures have been used in high-performance devices because of their higher electron and hole mobility compared to Si. 1-5 Three-dimensional Ge islands formed on Si surfaces by solid-phase epitaxy technique have also been demonstrated to have great potential in the fabrication of nanostructures. 6 In addition, Ge-on-insulators ͑GOI͒ is especially desired for achieving extremely high performance metal oxide silicon field-effect transistors ͑MOSFET͒ with sufficiently low leakage current. 7,8 However, for thin film transistor ͑TFT͒ applications, successful Ge thin film deposition on SiO 2 substrates using chemical vapor deposition ͑CVD͒ techniques has not been demonstrated so far due to the extremely long incubation times needed. [9][10][11][12][13][14][15] In the present study, we demonstrate the deposition of polycrystalline Ge films directly onto fully SiO 2 covered Si substrates with nearly no incubation time by using high-density plasma CVD ͑HD-PCVD͒ technique at 400°C. X-ray photoelectron spectroscopy ͑XPS͒ and Auger electron spectroscopy ͑AES͒ analyses show that the deposition of very pure Ge thin films can be achieved without significantly detectable O and C incorporations. X-ray diffraction ͑XRD͒ patterns clearly illustrate that the deposited Ge films are of cubic structure with primarily ͑111͒, ͑220͒, and ͑311͒ orientations, respectively, and are mainly composed of small grains with sizes around 14 nm calculated from full width at half-maximum ͑fwhm͒. Moreover, the results of high-resolution transmission electron microscopy ͑HRTEM͒ analysis firmly show that only very short incubation time is needed for the deposition. Because CVD has the advantage of uniformity control over other techniques such as sputtering 16 and e-gun deposition, 17,18 which is highly important in mass production, this technique, therefore, provides a simple, power...

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confidence: 81%

mentioning

confidence: 98%

Low-Temperature Growth of Polycrystalline Ge Films on SiO2 Substrate by HDPCVD

Yang

Shieh

Hsu

et al. 2005

Electrochemical and Solid-State Letters

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“…We can also see that the incubation time decreased with an increase in the GeF 4 flow rate, as shown in this figure. For poly-film deposited on a SiO 2 or glass substrate, a considerable amount of incubation time can be observed [24,25]. This is due to the heterogeneous reaction that dominates the nucleation rate on the surface.…”

Section: Reaction Model -Influence Of Gefmentioning

confidence: 99%

Silicon‐based narrow‐bandgap thin‐film semiconductor materials: polycrystalline SiGe prepared by reactive thermal CVD

Zhang

Shimizu

Zhao

et al. 2006

Physica Status Solidi (a)

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In this work, the mechanisms of reactive thermal CVD are discussed and the influences of various deposition parameters on crystallinity, composition, uniformity and reproducibility are clarified. Based on optimization of deposition parameters, we obtained device-grade polycrystalline SiGe (poly-SiGe) thin films with high crystallinity of > 95%, high uniformity of > 80% and high reproducibility of > 85% at 450 °C. The results presented in this paper proved that polycrystalline SiGe films deposited by reactive thermal CVD are suitable for device application.

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“…[5][6][7][8] SEG is difficult to obtain for conventional solid source MBE since solid source MBE is a physical process and does not offer the selectivity provided by the surface chemistry of deposited gas species. Recently, there has been a great deal of research in Si-based nanostructures.…”

Section: Introductionmentioning

confidence: 99%

Interfacet mass transport and facet evolution in selective epitaxial growth of Si by gas source molecular beam epitaxy

1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Facet formation and competition in selective epitaxial growth ͑SEG͒ of Si on SiO 2Ϫ masked nanometer growth windows were studied experimentally and theoretically in gas source molecular beam epitaxy. The windows were patterned along ͓110͔ on Si͑100͒ substrates. Mass accumulation around the edge of the SEG mesa top surface was observed and believed to be due to the interfacet mass transport from sidewalls to the top surface. Sidewall facet evolution from the initial ͑311͒ to ͑111͒ was observed. The facet evolution is due to the growth rate anisotropy among ͑100͒, ͑311͒, and ͑111͒. The interfacet mass transport is believed to affect growth rate of each facet and increase the growth rate anisotropy. As a result, it controls the size dependence of SEG growth rate and promotes the facet evolution. A theoretical model has also been developed for modeling the facet competition and evolution. Both the interfacet and intrafacet surface migration processes were taken into account in the model. The simulation results explain our experimental observations and provide an improved understanding of the facet growth on patterned substrates.

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Low-temperature selective epitaxy by ultrahigh-vacuum chemical vapor deposition from SiH4 and GeH4/H2

Cited by 49 publications

References 11 publications

Low-Temperature Growth of Polycrystalline Ge Films on SiO2 Substrate by HDPCVD

Low-Temperature Growth of Polycrystalline Ge Films on SiO2 Substrate by HDPCVD

Silicon‐based narrow‐bandgap thin‐film semiconductor materials: polycrystalline SiGe prepared by reactive thermal CVD

Interfacet mass transport and facet evolution in selective epitaxial growth of Si by gas source molecular beam epitaxy

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