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We report the deposition of epitaxial films of GexSi1−x on (100) silicon by the ultrahigh vacuum chemical vapor deposition technique. Epitaxial films grown at temperatures ranging from 577 to 665 °C have been characterized with respect to growth rate and germanium content. The results show features which have not been previously reported including an incubation time and a peak in the growth rate as a function of GeH4/H2 flow.

We report on the growth of germanium–silicon and silicon epitaxial layers by ultrahigh vacuum/chemical vapor deposition. When an in situ clean is used, films grown at 600 °C are defect-free by planar section transmission electron microscopy and no oxygen is detectable by secondary ion mass spectroscopy at the growth interface. In situ doping has been studied using B2H6/H2 and PH3/H2 as source gases. Ge0.13Si0.87 films doped with boron up to 5×1019 cm−3 have been grown and sharp doping transitions have been obtained. Phosphorus doping concentrations in silicon are limited by a decrease in growth rate with increasing phosphorus flow rate which is attributed to phosphorus blocking of reaction sites. A model for the decrease in growth rate with PH3/H2 flow is proposed which provides a good fit to the measurements.