Measurement of carrier generation lifetime in SOI devices

A Novel Electrode-Induced Strain Engineering for High Performance SOI FinFET utilizing Si (1hannel for Both N and PMOSFETs

“…10) [14]. The front gate voltage was stepped from above threshold to subthreshold with 0.1V at the drain (An inset of Fig.…”

Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs

“…In the case of FB SOI MOSFETs under low V D conditions, it is considered that the dominating generation and recombination mechanisms can occur in four main regions: the channel space-charge and film region, the source and drain junctions, and the front and back channel interfaces [15]. In order to evaluate a possible correlation between the HC-induced damage and the observed I D hysteresis behavior, figure 4 shows the dependence of the 2 nd peak of I D hysteresis on the increase of the front channel density of interface states (∆ N itf ) generated during the HC stress of different nMOSFETs.…”

Physical understanding and technological control of carrier lifetimes in semiconductor materials and devices: A critique of conceptual development, state of the art and applications

“…Pulsing the MOS capacitor into deep depletion, the capacitance-time (C-t) curve is recorded [104][105][106][107][108][109][110][111][112][113][114]. The capacitance relaxation is governed by thermal generation of electron-hole pairs.…”

“…Generation lifetime studies in SOI devices such as MOSFETs [110,[112][113] and MOS channel [114] have been carried out to understand their operational behaviour and for controlling their electrical characteristics.…”