We report the deposition of epitaxial films of GexSi1−x on (100) silicon by the ultrahigh vacuum chemical vapor deposition technique. Epitaxial films grown at temperatures ranging from 577 to 665 °C have been characterized with respect to growth rate and germanium content. The results show features which have not been previously reported including an incubation time and a peak in the growth rate as a function of GeH4/H2 flow.

Silicon based quadrupole mass spectrometry using microelectromechanical systemsReal-time feedback control of semiconductor processes based on in situ sensors can complement present statistical process control techniques. In this article, we explore the potential of quadrupole mass spectrometry as an in situ sensing technique. We show that it is possible to sense the fluxes of important species in a plasma process and use these measurements to implement a multivariable control scheme. As an example, the control of hydrogen, unreacted ammonia, and direct current bias in a plasma enhanced chemical vapor deposition silicon nitride process is demonstrated.

Selective epitaxy of Ge,Sir _ X in an ultrahigh-vacuum chemical vapor deposition reactor from SiH, and GeH4/H2 is reported for the first time. Growth is performed at 600 "C on patterned wafers after an 800 "C bake which provides a clean silicon surfa:e. Selective growth is maintained during a short incubation time. GeH4/H2 is found to increase the incubation time and the growth rate improving selectivity. Diodes fabricated from selectively grown films demonstrate high material and film/oxide interface quality.

Growth and characterization of ultrahigh vacuum/chemical vapor deposition SiGe epitaxial layers on bulk singlecrystal SiGe and Si substratesAn ultrahigh vacuum chemical vapor deposition system suitable for deposition of epitaxial GexSi l _ x has been constructed. We report details of its construction and operation and demonstrate deposition of epitaxial silicon and Ge x Sil _ x at temperatures as low as 577·C. Measurements of thickness uniformity both across and between wafers are also presented.

We have studied substitutional carbon incorporation in Si1−yCy alloys grown on Si (100) by ultrahigh vacuum chemical vapor deposition using silane and methylsilane as silicon and carbon precursors. Carbon incorporation has been studied in the growth temperature range of 550–650 °C. The total carbon content of the alloys increases linearly with the methylsilane partial pressure and a methylsilane sticking coefficient approximately two times higher than that of silane was determined from the data. Substitutional carbon content in the alloys tends to saturate at higher methylsilane flows. Our results, together with other previous reports, provide new insight into the roles of gas phase and surface reactions in determining growth rates and carbon incorporation efficiency.