Low‐temperature sintering of CaMgSi2O6-KBS composites with ultralow dielectric constant

Liu, Dongshuo; Zhong, Chaowei; Qin, Tianying; Yang, Qinghui; Tang, Bin; Zhang, Shuren

doi:10.1016/j.ceramint.2020.04.088

Cited by 15 publications

(1 citation statement)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The most potential microwave dielectrics with low ε r for millimeter‐wave devices exist in silicates, such as Mg 2 Al 4 Si 5 O 18 , CaMgSiO 4 , BaAl 2 Si 2 O 8 , CaMgSi 2 O 6 , and Ca 2 MgSi 2 O 7 7‐14 . The low ε r originates from the strong Si‐O bond and the reduced rattling of cations in [SiO 4 ] 4− tetrahedral 15 .…”

Section: Introductionmentioning

confidence: 99%

Phase evolution, crystal structure, and microwave dielectric properties of gillespite‐type ceramics

et al. 2020

View full text Add to dashboard Cite

A gillespite‐structured MCuSi4O10 (M = Ba1‐xSrx, Sr1‐xCax) ceramics with tetrahedral structure (P4/ncc) were prepared by solid‐state reaction method. X‐ray diffraction and thermogravimetry with differential scanning calorimetry (TG‐DSC) were employed to study the phase synthesis process of BaCuSi4O10. Pure BaCuSi4O10 phase was obtained at 1075°C and decomposed into BaSiO3, BaCuSi2O6, and SiO2 when calcined at 1200°C. The relationships between the crystal structure and microwave dielectric properties of MCuSi4O10 ceramics were revealed based on the Rietveld refinement and P‐V‐L complex chemical bond theory. The dielectric constant (εr) decreased linearly with decreasing total bond susceptibility and ionic polarizability. Quality factor (Q × f) was closely dependent on bond strength and lattice energy. The temperature coefficient of resonant frequency (τf) was controlled by the stability of [CuO4]6− plane in MCuSi4O10. Optimum microwave dielectric properties were obtained for SrCuSi4O10 when sintered at 1100°C for 3 hours with a εr of 5.59, a Q × f value of 82 252 GHz, and a τf of −41.34 ppm/°C. Thus, SrCuSi4O10 is a good candidate for millimeter‐wave devices.

show abstract

Section: Introductionmentioning

confidence: 99%

Phase evolution, crystal structure, and microwave dielectric properties of gillespite‐type ceramics

et al. 2020

View full text Add to dashboard Cite

show abstract

Effect of Ni Substituted MgZrTa₂O₈ Ceramics on Sintering Characteristics and Microwave Dielectric Properties

Gao,

Zhang,

Ding

2024

Adv Eng Mater

View full text Add to dashboard Cite

Herein, Mg1−x Ni x ZrTa2O8 (x = 0, 0.1, 0.3, 0.5, 0.8, 1) ceramics are synthesized using a solid‐phase reaction method. Ni2+ replacing Mg2+ improves the drawback of high sintering temperature and poor temperature stability. The samples have the relative density above 95% at the optimal sintering temperature. The sintering temperature of Mg1−x Ni x ZrTa2O8 reduces from 1475 °C to 1400 °C. And single‐phase Mg1−x Ni x ZrTa2O8 ceramics with monoclinic wolframite structure are analyzed. According to the Rietveld refinement results, with the doping of Ni2+, the transformation of unit cell volume leads to the shift of the main peak in the XRD pattern to a higher angle in 0 ≤ x ≤ 0.3 and a lower angle in 0.5 ≤ x ≤ 1. The εr of Mg1−x Ni x ZrTa2O8 is comparable to MgZrTa2O8. At 1400 °C, the Q×f is increased from 10,598 GHz in the undoped sample to 43,041 GHz in Mg0.9Ni0.1ZrTa2O8 ceramic. The absolute values of τf of ceramic samples decrease with the excessive Ni2+. The desirable dielectric properties (εr = 20.79, Q×f = 43,041 GHz, τf = −33.04 ppm/°C) are obtained at 1400 °C. Ni substitution is effective for MgZrTa2O8 ceramic to optimize densification temperature and retain the high Q×f value.This article is protected by copyright. All rights reserved.

show abstract

Effects of non-stoichiometry on the microstructure and microwave dielectric properties of Ba1+xCu2V2O8 (x = 0.15, 0.25, 0.35) ceramics

Qing

Cheng

et al. 2020

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Low‐temperature sintering of CaMgSi2O6-KBS composites with ultralow dielectric constant

Cited by 15 publications

References 30 publications

Phase evolution, crystal structure, and microwave dielectric properties of gillespite‐type ceramics

Phase evolution, crystal structure, and microwave dielectric properties of gillespite‐type ceramics

Effect of Ni Substituted MgZrTa₂O₈ Ceramics on Sintering Characteristics and Microwave Dielectric Properties

Effects of non-stoichiometry on the microstructure and microwave dielectric properties of Ba1+xCu2V2O8 (x = 0.15, 0.25, 0.35) ceramics

Contact Info

Product

Resources

About

Low‐temperature sintering of CaMgSi2O6-KBS composites with ultralow dielectric constant

Cited by 15 publications

References 30 publications

Phase evolution, crystal structure, and microwave dielectric properties of gillespite‐type ceramics

Phase evolution, crystal structure, and microwave dielectric properties of gillespite‐type ceramics

Effect of Ni Substituted MgZrTa2O8 Ceramics on Sintering Characteristics and Microwave Dielectric Properties

Effects of non-stoichiometry on the microstructure and microwave dielectric properties of Ba1+xCu2V2O8 (x = 0.15, 0.25, 0.35) ceramics

Contact Info

Product

Resources

About

Effect of Ni Substituted MgZrTa₂O₈ Ceramics on Sintering Characteristics and Microwave Dielectric Properties