Low-temperature sintering of ferroelectric Pb(Zr, Ti)O₃ thick films derived from stable sol-gel solutions

Abstract

2001) Low-temperature sintering of ferroelectric Pb(Zr, Ti)O 3 thick films derived from stable sol-gel solutions,We have studied sintering and densification of PbZro 52Ti04803 (PZT) films derived from diol-based sol-gel solutions. We found that densification by sintering began at below 750°C and completed at 850°C in 5 min. Initially, 0.83-pm-thick PZT single-coated films were prepared on F't/Ti/SiOz/Si substrates from stable propylene-glycol (1 ,2-propanedio1)-based solutions by crystallization at 700°C. The crystallized films consisted of fine perovskite grains and voids. We studied the firing temperature dependence of various properties such as microstructure, crystallinity, and ferroelectric properties for the single-coated films. Finally, 0.54-pm-thick PZT single-coated dense films were prepared by tiring at 850°Cfor 5 min. In order to prepare thicker PZT dense films, we studied low-temperature sintering of PZT rnulticoated thick films. Using this approach, 1.7-pm-thick PZT dense films were prepared by firing at 850°C for 5 min.

Low Temperature Preparation of Ferroelectric Relaxor Composite Thick Films

“…To reduce the sintering temperature, inorganic binder or sintering aids such as glass is added to thick film pastes to allow a densification at lower temperatures 12 . However, the fabrication process of active piezoelectric and pyroelectric elements for such devices reported via screen printing or tape casting process still involves high temperatures (750°–850°C 13,14 ) which limit their compatibility with Si IC technology. To obtain dense thick film composites compatible with Si routines and using the advantages of the solution process, a combined method of sol–gel with fine powder particles (so‐called composite coating technique) has recently emerged 15 as an alternative to the previously described techniques.…”