Low-temperature sol–gel processed AlO_x gate dielectric buffer layer for improved performance in pentacene-based OFETs

Abstract

An approach to achieve improved performance in pentacene-based organic field effect transistors (OFETs) using high-k AlOx prepared by a low temperature sol–gel technique as a thin buffer layer on a SiO2 gate dielectric was demonstrated.

Multifunctional Flexible Organic Transistors with a High-k/Natural Protein Bilayer Gate Dielectric for Circuit and Sensing Applications

“…Therefore, the best possible way to achieve high performance in flexible devices is by utilizing a hybrid gate dielectric composed of an inorganic high- k and organic polymer dielectric bilayer, mitigating both leakage and high operating voltage concerns in OFETs. , Several high- k dielectrics such as Al 2 O 3 , TiO 2 , Ta 2 O 5 , HfO 2 , ZrO 2 , BST, etc. have been widely studied to demonstrate low-voltage flexible OFETs; − however, HfO 2 is the most widely used dielectric − in bilayer combinations due to its high dielectric constant ( k ≈ 20–25), and low-temperature (∼100 °C) processing capabilities for high-quality, dense, and pinhole-free films with precise thickness control of up to a few nanometers with the help of techniques such as atomic layer deposition (ALD). , …”