Low temperature sputter deposition of SnOx:Sb films for transparent conducting oxide applications

Boltz, Janika; Koehl, D.; Wuttig, Matthias

doi:10.1016/j.surfcoat.2010.09.048

Cited by 42 publications

(18 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The surface energies obtained for the (1 1 0) and (1 0 1) SnO 2 crystal faces as a function of the oxygen chemical potential have revealed that the reduced (1 0 1) surface is more stable than the reduced (1 1 0) surface, but the situation inverts for the respective oxidized surfaces [18]. Moreover, a marked (2 1 1) orientation has been reported for ATO thin films prepared at intermediate oxygen pressures [18][19][20][21], which correspond to optimal conductivity values [19][20][21].…”

Section: Introductionmentioning

confidence: 89%

Structural and plasmonic characteristics of sputtered SnO2:Sb and ZnO:Al thin films as a function of their thickness

Guillén

Herrero

2016

J Mater Sci

View full text Add to dashboard Cite

Heavily doped metal oxide semiconductors are being developed as thin film transparent electrodes for many applications and their deposition at low substrate temperature can extend the use on heat sensitive devices. The structural and electro-optical characteristics of such metal oxide coatings are tightly related and depend on the specific deposition parameters apart from the material composition. In this work, SnO 2 :Sb (ATO) and ZnO:Al (AZO) thin films have been prepared by sputtering at room temperature on glass substrates, changing the deposition time to obtain various layer thicknesses from 0.2 to 0.9 lm; and they have been analyzed by X-ray diffraction, spectrophotometry, and Halleffect measurements. ATO samples crystallize in the tetragonal structure with mean crystallite size increasing from 8 to 20 nm when the film thickness grows. The comparison of Hall mobility and optical mobility values indicates a significant contribution of grain boundary scattering for these ATO layers. Otherwise, AZO films show larger crystallites (21-27 nm) and a strong preferential orientation for analogous thickness increment, resulting in a lower contribution of the grain boundary scattering to the overall Hall mobility. The ingrain mobility for each sample is also related to the respective crystallite size and carrier concentration values.

show abstract

Section: Introductionmentioning

confidence: 89%

Structural and plasmonic characteristics of sputtered SnO2:Sb and ZnO:Al thin films as a function of their thickness

Guillén

Herrero

2016

J Mater Sci

View full text Add to dashboard Cite

show abstract

“…Doped SnO 2 films, such as fluorine (F) [1][2][3][4][5], antimony (Sb) [6][7][8] and cobalt (Co) [9], have been proven to effectively increase the conductivity of SnO 2 film to improve the infrared reflectivity of the low emissivity (Low-E) glass and the efficiency of the photovoltaic cells. Some researchers [10,11] have found that the grain boundary is an important factor on the properties of nanograined oxides.…”

Section: Introductionmentioning

confidence: 99%

Evolution of element distribution at the interface of FTO/SiO x C y films with X-ray photoelectron spectroscopy

Zhang

Chen

et al. 2014

Materials Letters

View full text Add to dashboard Cite

“…Deposition can proceed in a variety of ways, including chemical vapor deposition [35], sputtering [36], pulsed-laser deposition [37], sol-gel process [38], rheotaxial growth and vacuum oxidation [19], and spray pyrolysis [8]. Sputtering and spray pyrolysis are methods which are quite straight forward to implement within the CMOS sequence.…”

Section: Sensing Layer Depositionmentioning

confidence: 99%

Processing of integrated gas sensor devices

Filipovic

Selberherr

2015

TENCON 2015 - 2015 IEEE Region 10 Conference

View full text Add to dashboard Cite

The integration of gas sensor components into wearable electronics will provide individuals the ability to detect harmful chemicals and pollutants in the environment. The key to this integration is the development of processing techniques for the fabrication of sensor components which can be incorporated into the conventional CMOS fabrication sequence. This includes the etching required for the formation of a suspended membrane on top of which the microheater and sensing layer are placed and the deposition of the metal oxide sensing layer itself. Recently, spray pyrolysis has been investigated as a possible metal oxide deposition approach which is economical, easy to implement, and provides good step coverage for trench geometries. This work investigates wet chemical etching and plasma etching techniques for the generation of a suspended membrane and the spray pyrolysis and sputtering techniques for the deposition of a tin oxide gas sensing layer.

show abstract

Low temperature sputter deposition of SnOx:Sb films for transparent conducting oxide applications

Cited by 42 publications

References 19 publications

Structural and plasmonic characteristics of sputtered SnO2:Sb and ZnO:Al thin films as a function of their thickness

Structural and plasmonic characteristics of sputtered SnO2:Sb and ZnO:Al thin films as a function of their thickness

Evolution of element distribution at the interface of FTO/SiO x C y films with X-ray photoelectron spectroscopy

Processing of integrated gas sensor devices

Contact Info

Product

Resources

About