Low-temperature structural distortion in CuS

Real-time studies of phase transformations in Cu–In–Se–S thin films 2. Sulfurization of Cu–In precursors

“…The values of a a ¼ 0:9 AE 2 Â 10 À5 K À1 and a c ¼ 1:0 AE 2 Â 10 À5 K À1 for covellite are in fair agreement with a a ¼ 1:2 AE 2 Â 10 À5 K À1 and a c ¼ 1:5 AE 2 Â 10 À5 K À1 of Ref. [11].…”

“…11a gives representative spectra for this experiment. The observed phases are CuIn 2 and Cu in spectrum (A), Cu 11 In 9 in (B), Cu 16 In 9 and CuInS 2 in (C), CuInS 2 and a-InS in (D), CuInS 2 and CuIn 5 S 8 in (E). It should be noted that the a-InS phase observed during Cu-In sulfurization is more (0 0 1) oriented with respect to the substrate normal as indicated by a stronger 004 reflex (see spectrum D).…”

“…At point Z, the formation of CuInS 2 starts and continues with a simultaneous further decrease of the Cu signal. We propose that the CuInS 2 formation takes place by consumption of Cu 11 In 9 according to the gross reaction 4Cu 11 In 9 +9S 8 -36CuInS 2 +8Cu. This is in contrast to the growth of CuInSe 2 from stacked elemental layers reported in Ref.…”

Crystal structure determination of solar cell materials: Cu2ZnSnS4 thin films using X-ray anomalous dispersion

“…The 2a-8g and 2d-8g lengths were ca . 8% longer than their reported values [18][19][20]. These longer bond lengths were probably due to disorder of the 2a and 2d sites, resulting in a large atomic displacement parameter B as shown in Table 2.…”

Influence of sintering temperature on screen printed Cu2ZnSnS4 (CZTS) films

“…When the sintering temperature was at 450°C, which was close to burnout temperature of ethyl cellulose, the resistivity of CZTS film annealed at 450°C for 1 h decreased significantly. The decrease in resistivity with the increase in sintering temperature at 500 and 550°C was possibly attributed to the presence of CuS phase in samples after annealing at higher temperature, which has a resistivity of 0.1-0.01 X cm [30,31].…”