Low-temperature synthesis of carbon nitride by microwave plasma CVD

Abstract

Investigation of the low temperature synthesis of carbon nitride was carried out by microwave plasma CVD. Carbon nitride was synthesized using an improved microwave plasma CVD apparatus. Si was used as the substrate. A mixture of CH4 and N2 gas was used as a reaction gas. Synthesis pressure was varied from 1.1 to 4.0 kPa, microwave power was varied from 400 to 800 W. Faceted particles were obtained at a microwave power of 800 W and a substrate temperature of 880 K. Faceted particles were obtained at various synthesis pressures and a substrate temperature of as low as 740 K. Also, β-Si3N4 and α-C3N4 peaks were observed in the X-ray diffraction (XRD) pattern. As a result of studies of the low-temperature synthesis of carbon nitride by microwave plasma CVD, the morphology of deposits was found to depend on substrate temperature, and faceted particles were obtained at a substrate temperature as low as 740 K.

Perspectives on functional nitrogen science and plasma-based in situ functionalization

“…Nitrides Nitrides are another class of nitrogen-containing compounds based on metal-nitrogen bonds. Examples include boron nitride, [37][38][39][40] carbon nitride, [41][42][43][44][45] silicon nitride, 46) gallium nitride, [47][48][49][50][51][52][53] indium nitride, 54) aluminum nitride, iron nitride, titanium nitride, tantalum nitride, tungsten nitride and hafnium nitride. Methods for the deposition of atomic layers of these compounds are listed in Ref.…”

Preparation of carbon nitride films from g-C₃N₄ by ion-beam-assisted deposition

“…Some reports showed that crystalline deposits are obtained when using CVD. α-C3N4 was obtained from a mixture of CH4-N2 reaction gas systems using microwave plasma CVD (Tanaka and Sakamoto, 2016), and graphitic C3N4 (g-C3N4) was obtained by thermal CVD (Tanaka and Sakamoto, 2017). Nevertheless, a super-hard carbon nitride film has not been realized.…”