Low-threshold and high-temperature operation of InGaAlAs-InP lasers

Chen, T.R.; Chen, P.C.; Ungar, J.; Newkirk, M.A.; Oh, S.; Bar‐Chaim, N.

doi:10.1109/68.554156

Cited by 53 publications

(5 citation statements)

References 3 publications

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“…Additional experiments are underway to also quantify Auger losses in these type-II “W”-QWH lasers and to determine the origin of the decrease of T 1 above 70 °C. A comparison with literature values of InP-based materials systems is difficult since the actual device design as well as facet coatings have an influence on the characteristic temperatures 3 . Typical T 0 values reported in the literature are T 0 = 50K – 80K and T 0 = 100K – 120K for (GaIn)(AsP)/InP 1 and (AlGaIn)As/InP 2 – 5 , respectively, in case of ridge waveguide and buried-heterostructure lasers.…”

Section: Resultsmentioning

confidence: 99%

High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm

Fuchs

Brüggemann

Weseloh

et al. 2018

Sci Rep

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Electrical injection lasers emitting in the 1.3 μm wavelength regime based on (GaIn)As/Ga(AsSb)/(GaIn)As type-II double “W”-quantum well heterostructures grown on GaAs substrate are demonstrated. The structure is designed by applying a fully microscopic theory and fabricated using metal organic vapor phase epitaxy. Temperature-dependent electroluminescence measurements as well as broad-area edge-emitting laser studies are carried out in order to characterize the resulting devices. Laser emission based on the fundamental type-II transition is demonstrated for a 975 μm long laser bar in the temperature range between 10 °C and 100 °C. The device exhibits a differential efficiency of 41 % and a threshold current density of 1.0 kA/cm2 at room temperature. Temperature-dependent laser studies reveal characteristic temperatures of T0 = (132 ± 3) K over the whole temperature range and T1 = (159 ± 13) K between 10 °C and 70 °C and T1 = (40 ± 1) K between 80 °C and 100 °C.

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Section: Resultsmentioning

confidence: 99%

High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm

Fuchs

Brüggemann

Weseloh

et al. 2018

Sci Rep

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“…The valence band offsets, DE v are very similar at 161 meV and 148 meV for the AlGaInAs and InGaAsP devices, respectively. It has been proposed that the major benefit of AlGaInAs over InGaAsP is that the higher DE c reduces the thermal escape of electrons from the QW [2,3] which directly results Fig. 2.…”

Section: Effect Of the Conduction Band Offset On I Th Our Measurementmentioning

confidence: 99%

“…There is currently great interest in developing 1.3 mm lasers using the AlGaInAs/InP materials system and devices based upon this material are already exhibiting very promising characteristics including a reduced temperature sensitivity of I th [2,3]. The extent to which I th varies with temperature if often quantified in terms of a characteristic temperature, T 0 , such that I th ¼ I 0 exp ðT=T 0 Þ where I 0 is a constant.…”

mentioning

confidence: 99%

“…The extent to which I th varies with temperature if often quantified in terms of a characteristic temperature, T 0 , such that I th ¼ I 0 exp ðT=T 0 Þ where I 0 is a constant. For InGaAsP devices, T 0 is typically $50-60 K whereas AlGaInAs devices have shown T 0 values >100 K [3]. In this paper, we compare the threshold characteristics of conventional InGaAsP-based lasers with those of AlGaInAs-based devices as function of both temperature and pressure.…”

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confidence: 99%

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Superior Temperature Performance of 1.3 ?m AlGaInAs-Based Semiconductor Lasers Investigated at High Pressure and Low Temperature

Sweeney

Higashi

Andreev

et al. 2001

phys. stat. sol. (b)

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AlGaInAs-based 1.3 mm lasers exhibit a reduced temperature sensitivity of the threshold current, I th , when compared with conventional InGaAsP-based devices. We have investigated this improvement both experimentally and theoretically. We observe that I th increases with increasing pressure in the AlGaInAs devices which we attribute to the dominance of radiative recombination. In contrast, a decrease of I th with pressure is observed in InGaAsP devices which we attribute to a large non-radiative Auger current, I Aug , which decreases with increasing band gap. From these measurements taken together with temperature dependence studies we conclude that I Aug accounts for $50% I th in InGaAsP devices, but it amounts to <30% I th in the AlGaInAs lasers leading to a lower temperature dependence of I th . Theoretical calculations suggest that this reduction in I Aug in AlGaInAs is a direct consequence of the larger conduction band offset leading to improved electron confinement and a reduced quantum well hole concentration at threshold, p QW , and hence a reduced CHSH Auger process.Introduction Of paramount importance in the development of the internet are reliable and temperature stable lasers emitting at 1.3 mm. Whilst it is possible to incorporate elaborate temperature stabilising electronics into the packages of 1.55 mm lasers for long haul (trans-oceanic) telecommunications, it is economically prohibitive to do this for 1.3 mm devices which are required for fibre-to-the home (FTTH) systems. 1.3 mm lasers have conventionally been fabricated using the InGaAsP/InP materials system. These lasers generally have good output characteristics but the temperature sensitivity of their threshold currents (I th ) has prevented them from being deployed in FTTH systems.Previously, using high pressure techniques, we have shown that the poor thermal performance of InGaAsP-based 1.3 mm and 1.5 mm lasers is due to an intrinsic nonradiative Auger recombination process [1]. There is currently great interest in developing 1.3 mm lasers using the AlGaInAs/InP materials system and devices based upon this material are already exhibiting very promising characteristics including a reduced temperature sensitivity of I th [2,3]. The extent to which I th varies with temperature if often quantified in terms of a characteristic temperature, T 0 , such that

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“…2 Enhanced carrier confinement translates into a reduction in N b by a factor of ~e 2 (about an order of magnitude) at room temperature, suggesting smaller 981 AlGaInAs/InP Strained-Layer Quantum Well Lasers at 1.3 µm Grown by Solid Source Molecular Beam Epitaxy temperature sensitivity of external quantum efficiency and better T 0 . 2,[12][13][14][15][16][17] In the present paper, 1.3 µm AlGaInAs/InP quantum well lasers have been prepared and the material quality and performance characteristics of the lasers have been examined. This is accomplished just by interchanging Ga and Al, due to the small difference (0.12%) in the lattice constants of GaAs and AlAs.…”

Section: Introductionmentioning

confidence: 99%

AlGaInAs/InP strained-layer quantum well lasers at 1.3 µm grown by solid source molecular beam epitaxy

Savolainen

Toivonen

Orsila

et al. 1999

J. Electron. Mater.

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Low-threshold and high-temperature operation of InGaAlAs-InP lasers

Cited by 53 publications

References 3 publications

High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm

High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm

Superior Temperature Performance of 1.3 ?m AlGaInAs-Based Semiconductor Lasers Investigated at High Pressure and Low Temperature

AlGaInAs/InP strained-layer quantum well lasers at 1.3 µm grown by solid source molecular beam epitaxy

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