2015
DOI: 10.7567/apex.9.012101
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Low-threshold-current yellow BeZnCdSe quantum-well ridge-waveguide laser diodes under continuous-wave room-temperature operation

Abstract: Low-threshold-current yellow BeZnCdSe single-quantum-well (SQW) laser diodes (LDs) have been developed by using a ridge-waveguide structure. The top p-cladding layer was etched to suppress the leakage current that flowed laterally outside of the electrode. Ridge waveguides were covered with a SiO2 layer and planarized by chemical–mechanical polishing and reactive ion etching. Room-temperature lasing under continuous-wave condition was achieved with the laser cavity formed by cleaved waveguide facets coated wit… Show more

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Cited by 13 publications
(3 citation statements)
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“…To circumvent these difficulties, some more elaborated heterostructures to produce yellow light have been reported. For example, ZnCdSeBe alloys have been employed for QWs in the active region of laser diodes [6,7] ; CdSe-quantum dot-ZnCdSe QW laser heterostructures, surrounded by a ZnS 0.17 Se 0.83 /ZnSe superlattice to compensate the compressive stress of the ZnCdSe, exhibited yellow-orange emission at 590 nm and low threshold (2.5 kW cm À2 ) lasing in region 583-593 nm depending on the length of the resonator. [8,9] Another approach has been the use of InP substrates for the growth of lattice-matched ZnCdSe QWs within ZnCdMgSe barriers, avoiding the use of ZnSe.…”
Section: Introductionmentioning
confidence: 99%
“…To circumvent these difficulties, some more elaborated heterostructures to produce yellow light have been reported. For example, ZnCdSeBe alloys have been employed for QWs in the active region of laser diodes [6,7] ; CdSe-quantum dot-ZnCdSe QW laser heterostructures, surrounded by a ZnS 0.17 Se 0.83 /ZnSe superlattice to compensate the compressive stress of the ZnCdSe, exhibited yellow-orange emission at 590 nm and low threshold (2.5 kW cm À2 ) lasing in region 583-593 nm depending on the length of the resonator. [8,9] Another approach has been the use of InP substrates for the growth of lattice-matched ZnCdSe QWs within ZnCdMgSe barriers, avoiding the use of ZnSe.…”
Section: Introductionmentioning
confidence: 99%
“…However, the range of available direct emission wavelengths from semiconductor lasers exhibits a large gap in the visible range from the green to the orange spectral region (see Figure ). Despite various approaches and ongoing research activities in this field, the output power of experimental stage laser diodes in the yellow–orange spectral range is limited to mW power levels, mostly operated in pulsed regime with very low efficiencies. Laser diodes with emission in the green do exist, however, their efficiency and output power drastically decrease for wavelengths beyond 532 nm.…”
Section: Introductionmentioning
confidence: 99%
“…In recent years, the group II–VI selenide quantum well structures have been investigated for several applications such as quantum cascade structures , short wavelength quantum well infrared photodetector , yellow laser diodes , and yellow emitters . Among the others, MgSe/CdSe/ZnCdMgSe quantum well structures have been suggested as an alternative to existing systems for applications in the optical communication wavelength 1.55μm .…”
Section: Introductionmentioning
confidence: 99%