Low voltage characteristics of InGaAs/InP compositechannel HEMT structure fabricated by opticallithography

Strahle, S.; Henle, B.; Kohn, E.

doi:10.1049/el:19941346

Cited by 3 publications

(2 citation statements)

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“…The highest f,,,,/f, ratio of 2.6 is obtained in the case of the composite channel structure in conjunction with the highest f, * L, product of 39 GHz pm measured at the same bias point. This may indeed be attributed to the InP subchannel, where the electron dynamics are improved at high fields [6]. The double-side doped device (B) show optimum performance already in the range of v d = 1.4 V. This may be attributed to low parasitic resistances due to the high 2DEG density.…”

Section: Discussionmentioning

confidence: 91%

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Microwave performance of InP-based HEMTs for low-voltage application

Strahle

Henle

Lee

et al. 1996

Microw. Opt. Technol. Lett.

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100 200 300 Drain current (mA/mm) Figure 6 Unity current gain frequency fT against Id at Vd = 1.0 V of an InGaP-SC-HEMT and a conventional HEMTHEMTs were improved, and high gmmaX and f r were obtained for 0.1-pm T-gate devices. From these results, it was concluded that the strained InGaP SC layer did not affcct dc and rf performance of InGaP-SC-HEMTs. Moreover, the lower R, of InGaP-SC-HEMTs is expected to provide better noise performance than that of conventional HEMTs. ACKNOWLEDGMENT The authors would like to thank M. Azuma, Y. Ikawa, and M. Obara of Toshiba Research and Development Center for advice and encouragement. KEY TERMS InP-based HEMT, composite channel HEMT, low uoltage application ABSTRACT Usually high power gain is achieued at the expense of reduced f,. In this investigation a high f,,, / f; ratio vf 2.6 is obtained in combination with a f, * L, product of 39 GHz pn, equiualent to an effectice uelocily of 2.45 * lo7 ern / s. Despite a relaxed gate length of approximately 0.5 pm, these features were obtained at low drain bias of Vd = 1.5 K 0 I996 John Wiley & Sons, Inc. Received 7-12-95; revised 8-25-95 ABSTRACT High-performance ZnAlAs / ZnGaAs HEMTs with a highly uniform threshold voltage are fabricated using an ZnP-recess-etch stopper. Recess-deplh control is improued, and design vf the device chuructehtics is made easier. An SCFL ring oscillator with a propagation delay time of 6.6 ps / gate is achieved with these HEMTs. 0 1996 John Wley & Sons, Inc.

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Section: Discussionmentioning

confidence: 91%

“…The f, and f,,, are extrapolated from the Hil and MAG/MSG parameters, respectively [6]. The dc and rf results of the three structures are given in Table 1.…”

Section: And Rf Resultsmentioning

confidence: 99%