Low-voltage driven visible and infrared electroluminescence from light-emitting device based on Er-doped TiO2/p+-Si heterostructure

Abstract

We report on visible and infrared electroluminescence (EL) from the light-emitting device based on Er-doped TiO2/p+-Si heterostructure. Under a forward bias voltage as low as 5.5 V, the device emits ∼1540 nm infrared light and visible light peaking at 522, 553, 564, and 663 nm, respectively, which are originated from Er3+ intra-4f transitions. It is found that the existence of sufficient oxygen vacancies in TiO2 is critical for triggering the Er-related EL. Furthermore, the energy transfer from the oxygen-vacancy-related excitons in TiO2 matrix to Er3+ ions is supposed to be responsible for the above-mentioned EL.

Electroluminescence efficiencies of erbium in silicon-based hosts

“…While this process allows for good conduction properties and low onset voltage for EL, it strongly reduces the excitation efficiency of Er 3þ ions. In such a regime, the Er 3þ excitation could occur via either energy transfer between traps and Er 3þ ions 6,8,[10][11][12] or impact excitation. 8 In the case of energy-transfer excitation, the donor-acceptor interaction is distance-dependent, 33 and the probability for such a process to occur is therefore low (Note that the fraction of excited Er 3þ ions found here is comparable to the one for Er 3þ ions sensitized by energy-transfer from Si nanoclusters.…”

Memory and Electrical Properties of (100)‐Oriented AlN Thin Films Prepared by Radio Frequency Magnetron Sputtering

“…However, the high volatile pollution elements and high fabrication cost of the complex composition material were serious difficult problems for applications in integrated circuit semiconductor processing. For this reason, the simple binary metal oxide materials such as ZnO, Al 2 O 3 , TiO 2 , and Ta 2 O 5 were widely considered and investigated for the various functional electronic product applications in resistance of random access memory devices [10][11][12].…”

The Influence of Vanadium Doping on the Physical and Electrical Properties of Non-Volatile Random Access Memory Using the BTV, BLTV, and BNTV Oxide Thin Films

“…However, the high volatile pollution elements and high fabrication cost of the complex composition material were serious difficult problems for applications in integrated circuit semiconductor processing. For this reason, the simple binary metal oxide materials such as ZnO, Al 2 O 3 , TiO 2 , and Ta 2 O 5 were widely considered and investigated for the various functional electronic product applications in resistance random access memory devices [10][11][12].…”

“…Such as Pb(Zr,Ti)O 3 (PZT), Sr 2 Bi 2 Ta 2 O 9 (SBT), SrTiO 3 (ST), Ba(Zr,Ti)O 3 (BZ1T9), and (Ba,Sr)TiO 3 (BST) were widely studied and discussed for large storage capacity FeRAM devices. The (Ba,Sr)TiO 3 and Ba(Ti,Zr)O 3 ferroelectric materials were also expected to substitute the PZT or SBT memory materials and improve the environmental pollution because of their low pollution problem [9][10][11][12][13][14][15]. In addition, the high dielectric constant and low leakage current density of zirconium and strontium-doped Ba-TiO 3 thin films were applied for the further application in the high density dynamic random access memory (DRAM) [16][17][18][19][20].…”