Low voltage, high performance inkjet printed carbon nanotube transistors with solution processed ZrO2 gate insulator

Kim, Bongjun; Jang, Seonpil; Prabhumirashi, Pradyumna L.; Geier, Michael L.; Hersam, Mark C.; Dodabalapur, Ananth

doi:10.1063/1.4819465

Cited by 47 publications

(59 citation statements)

References 30 publications

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“…These TFTs have been utilized as the active matrix backplane for organic light-emitting diode displays 33 and user-interactive surfaces, 34 demonstrating their utility for large-area electronic systems. Uniquely, gravure 35,36 or inkjet 37 printed TFTs based on SWCNT networks have also been reported, demonstrating excellent performances, surpassing that of printed organic devices by a large margin. The performance of SWCNT TFTs is largely dependent on the properties of the assembled random networks.…”

Section: ■ Introductionmentioning

confidence: 99%

“…The work presents an important process scheme for nanomanufacturing of SWCNT-based electronics. 37 printed TFTs based on SWCNT networks have also been reported, demonstrating excellent performances, surpassing that of printed organic devices by a large margin. The performance of SWCNT TFTs is largely dependent on the properties of the assembled random networks.…”

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confidence: 99%

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Design of Surfactant–Substrate Interactions for Roll-to-Roll Assembly of Carbon Nanotubes for Thin-Film Transistors

et al. 2014

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Controlled assembly of single-walled carbon nanotube (SWCNT) networks with high density and deposition rate is critical for many practical applications, including large-area electronics. In this regard, surfactant chemistry plays a critical role as it facilitates the substrate− nanotube interactions. Despite its importance, detailed understanding of the subject up until now has been lacking, especially toward tuning the controllability of SWCNT assembly for thin-film transistors. Here, we explore SWCNT assembly with steroid-and alkyl-based surfactants. While steroid-based surfactants yield highly dense nanotube thin films, alkyl surfactants are found to prohibit nanotube assembly. The latter is attributed to the formation of packed alkyl layers of residual surfactants on the substrate surface, which subsequently repel surfactant encapsulated SWCNTs. In addition, temperature is found to enhance the nanotube deposition rate and density. Using this knowledge, we demonstrate highly dense and rapid assembly with an effective SWCNT surface coverage of ∼99% as characterized by capacitance−voltage measurements. The scalability of the process is demonstrated through a roll-to-roll assembly of SWCNTs on plastic substrates for large-area thin-film transistors. The work presents an important process scheme for nanomanufacturing of SWCNT-based electronics. 37 printed TFTs based on SWCNT networks have also been reported, demonstrating excellent performances, surpassing that of printed organic devices by a large margin. The performance of SWCNT TFTs is largely dependent on the properties of the assembled random networks. ■ INTRODUCTION38 Specifically, high nanotube density yields high ON-state current, while bundling during assembly increases the OFF-state current. 39,40 Thus, understanding and controlling the nanotube−substrate binding as facilitated through the surfactant−surface interactions is of profound interest, with strong emphasis on enhancing density and reducing bundling. Furthermore, fast nanotube assembly on substrates is essential for practical applications as it determines the process throughput, eventually allowing roll-to-roll (R2R) assembly and processing of SWCNTs over large-areas.Significant research has focused on dispersion of SWCNTs in liquids over the past decade, 41−60 with one promising method involving the use of aqueous solutions with organic surfactants that show long-term stability over several months. 52,54,55 Thin and thick films of SWCNTs from nanotube suspensions have also been widely explored for various applications. 9,15,33,34,36,61 However, the details of the assembly process of SWCNTs for "TFT-grade" random networks have not been fully explored, which is a critical step for optimizing the deposition quality and rate. In addition, most work in literature has focused on the use of commercially available solutions of semiconductor-enriched SWCNTs for TFT fabrication. The surfactants used for these commercial solutions are often not publically known, and a change in the surfactant ...

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Section: ■ Introductionmentioning

confidence: 99%

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confidence: 99%

Design of Surfactant–Substrate Interactions for Roll-to-Roll Assembly of Carbon Nanotubes for Thin-Film Transistors

et al. 2014

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“…Excellent results in terms of mobility were obtained with aerosol jet printing and inkjet printing of s-SWCNTs sorted in water with surfactants by density gradient centrifugation, while typically requiring post-processing on the printed network to improve device performances. [32][33][34][35][36] Only recently, s-SWCNTs sorted in organic solvents by noncovalent functionalization with polymers have been patterned by inkjet printing showing p-type only operation, with saturation mobility of 0.5 cm 2 V −1 s −1 . [ 37 ] Owing to the low loading of dispersed nanotubes, 10 printing passes were needed to obtain a working connected network of nanotubes.…”

Section: Doi: 101002/aelm201600094mentioning

confidence: 99%

Inkjet Printed Single‐Walled Carbon Nanotube Based Ambipolar and Unipolar Transistors for High‐Performance Complementary Logic Circuits

Bucella

Salazar‐Rios

Derenskyi

et al. 2016

Adv Elect Materials

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“…2(a) shows transfer characteristics of solution-processed SWCNT TFTs with and without post-treatments by NH 4 OH and HNO 3 . The measurements of transfer curves were performed by sweeping the gate voltage from þ5 to À5 V. As-deposited sample exhibits clearly p-type carrier transport characteristics, and a large positive turn-on voltage and V T of about þ2 V as previously reported papers of solution-processed SWCNT TFTs [5,21,22]. On the other hands, after post-treatments with NH 4 OH, on-current decreased compared to the pristine sample but the turn-on voltage and V T were shifted toward 0 V for the same gate voltage sweep range.…”

Section: Resultsmentioning

confidence: 99%

Tunable threshold voltage in solution-processed single-walled carbon nanotube thin-film transistors

Seong

Kim

et al. 2015

Current Applied Physics

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Low voltage, high performance inkjet printed carbon nanotube transistors with solution processed ZrO2 gate insulator

Cited by 47 publications

References 30 publications

Design of Surfactant–Substrate Interactions for Roll-to-Roll Assembly of Carbon Nanotubes for Thin-Film Transistors

Design of Surfactant–Substrate Interactions for Roll-to-Roll Assembly of Carbon Nanotubes for Thin-Film Transistors

Inkjet Printed Single‐Walled Carbon Nanotube Based Ambipolar and Unipolar Transistors for High‐Performance Complementary Logic Circuits

Tunable threshold voltage in solution-processed single-walled carbon nanotube thin-film transistors

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