Low voltage induced reversible magnetoelectric coupling in Fe<sub>3</sub>O<sub>4</sub> thin films for voltage tunable spintronic devices

Zhang, Le; Hou, Wenting; Dong, Guohua; Zhou, Ziyao; Zhao, Shirong; Hu, Zhongqiang; Ren, Wei; Chen, Mingfeng; Nan, Ce‐Wen; Ma, Jing; Zhou, Hua; Chen, Wei; Ye, Zuo‐Guang; Jiang, Zhuangde; Liu, Ming

doi:10.1039/c8mh00763b

Cited by 24 publications

(17 citation statements)

References 47 publications

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“…[49] In case of 13 nm films, the attained large values of surface charge up to 250 µC cm −2 enabled a maximum reversible modulation in magnetization of about 30% at room temperature. Several other comprehensive studies contributed to disentangle the complex relationship between charge carrier doping and magnetism in electrolyte-gated magnetic oxides, including investigations on LCMO, [80,91] LSMO, [43,156] LaMnO 3 , [67] Pr 1−x (Ca 1−y Sr y ) x MnO 3 , [157,158] LSCO, [82] Fe 3 O 4 , [159] and γ-Fe 2 O 3 . [42] In addition, the magnetic response was flexibly modulated in-phase or antiphase with respect to the induced surface charge by judiciously adjusting the applied bias voltage (see Figure 4b).…”

Section: Me Coupling Via Charge Carrier Dopingmentioning

confidence: 99%

“…List of parameters of interest in various ME systems, including kind of coupling mechanism, variation in magnetization ΔM, applied voltage ΔV, calculated ME voltage coefficient α C,V , presence of reversibility, cycling time, and working temperature. [31] The most pronounced variation in ΔH regards the shift in ferromagnetic resonant field via strain effect in allsolid-state [59] composites and via charge carrier doping in solid/ liquid [159] composites. The abbreviations refer as following: room temperature (RT), ethylene carbonate (EC), diethyl carbonate (DC), ethyl acetate (EA), propylene carbonate (PC).…”

Section: Comparison Of Technologically Relevant Me Characteristicsmentioning

confidence: 99%

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Voltage‐Control of Magnetism in All‐Solid‐State and Solid/Liquid Magnetoelectric Composites

2019

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activities. [1][2][3][4][5][6][7][8][9][10][11][12] From a technological perspective, several low-power ME applications have been envisioned, comprising devices for memory storage and processing, [13,14] tuning and filtering of RF/microwave signals, [15,16] energy conversion and harvesting, [17,18] sensing, [19,20] and actuation. [21,22] By definition, the direct ME effect is manifested when an electric polarization P is induced by usage of a magnetic field H in accordance with Δ Δ to compare the strength of the interaction between electricity and magnetism among different magnetoelectric systems. chemical control of the physical (magnetic) properties in metals and oxide nanostructures; electrostatic doping via field-effect; reversible magnetic phase transitions induced with ionic liquid charging; spintronics; printed electronics; fabrication of solution-processed devices (transistors, etc.)There are some nontrivial reasons explaining why solid/ liquid ME composites developed later than all-solid-state approaches. From an experimental perspective, the usage of conventional aqueous electrolytes poses some restrictions in terms of the operating conditions. Concerning the applied voltage, water electrolysis already occurs at a low voltage of

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Section: Me Coupling Via Charge Carrier Dopingmentioning

confidence: 99%

Section: Comparison Of Technologically Relevant Me Characteristicsmentioning

confidence: 99%

Voltage‐Control of Magnetism in All‐Solid‐State and Solid/Liquid Magnetoelectric Composites

2019

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“…Importantly, iron oxides are widely utilized in areas such as energy storage, spintronic devices, or biomedical systems, thus having remarkable technological, economic, and societal impacts. [ 30,41,42 ]…”

Section: Introductionmentioning

confidence: 99%

Voltage‐Induced ON Switching of Magnetism in Ordered Arrays of Non‐Ferrimagnetic Nanoporous Iron Oxide Microdisks

Cialone

Nicolenco

Robbennolt

et al. 2020

Adv Materials Inter

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Tailoring the magnetic properties of ordered arrays of patterned structures usually requires stringent control of their size, pitch, microstructure, and composition. Here, a fundamentally different approach to manipulate the magnetic behavior of lithographed microdisks, based on the application of electrical voltage, is demonstrated. First, highly porous iron oxide films with virtually no magnetic response (OFF state) are grown by sol–gel chemistry. Subsequently, arrays of microdisks (8 µm in diameter) are obtained combining lithography with wet chemical etching processes. Electrolyte‐gating (with an anhydrous electrolyte) is then employed to induce a tunable (i.e., “on‐demand”) ferromagnetic response in these disks (OFF–ON switching of magnetism) at room temperature. The changes in magnetic properties are attributed to magnetoelectrically‐driven oxygen ion migration, which is enhanced due to nanoporosity. This causes partial reduction of the oxide phases to metallic Fe. The effect can be considerably reversed by applying voltage of opposite polarity. These results are appealing for diverse technological applications that require the use of patterned structures with easily tunable magnetic properties, such as magnetic micro‐electro‐mechanical systems, microfluidic, and lab‐on‐a‐chip platforms for biomedical therapies and, ultimately, energy‐efficient magnetic memories or neuromorphic computing.

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“…The interest in half-metallic materials has grown over the decades owing to their widespread application potential in spintronics (where the spin degrees of freedom are used in design of spin FET's, spin memory devices and quantum computing components) [1,2]. Magnetite (Fe3O4) is one of the important material due to its interesting physical properties, such as, half-metallicity, high Curie temperature (850 K) and the Verwey transition (metal to insulator transition) at 125 K [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Strain Induced Modifications of Valence Band Features in Fe3O4 Epitaxial Heterostructures

Singh¹,

Arora²,

Choudhary³

2018

JNST

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We report systematic investigations of lattice mismatch strain and the strain relaxation induced modifications on the valence band electronic structure of the epitaxial Fe3O4/Si (100) and Fe3O4/MgO (100) heterostructures. The Fe3O4 films on Si (100) and MgO (100) substrates were investigated though the angle-integrated photoemission spectroscopy (AIPES) at room temperature in the energy range 45-65 eV. Depending on the strain state of the films, the Raman modes and the Verwey transition temperature show deviations from the corresponding bulk values. The valence band feature at 2.7 eV (3.5 eV) shifts towards (away) the Fermi level with an increase (decrease) in strain resulting in decrease (increase) of density of states (DOS) of the minority spin Fe(A) 3d-eg band (majority spin Fe(B) 3d-t2g band). The effect is more pronounced in the case of films on MgO (100) substrate in comparison to the films on Si (100) substrate.

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Low voltage induced reversible magnetoelectric coupling in Fe₃O₄ thin films for voltage tunable spintronic devices

Abstract: A giant ME coefficient of 368 Oe V−1 at 1.5 V with good reversibility can be effectively controlled by IL gating in Fe3O4, which could be used to design tunable spintronic devices.

Cited by 24 publications

References 47 publications

Voltage‐Control of Magnetism in All‐Solid‐State and Solid/Liquid Magnetoelectric Composites

Voltage‐Control of Magnetism in All‐Solid‐State and Solid/Liquid Magnetoelectric Composites

Voltage‐Induced ON Switching of Magnetism in Ordered Arrays of Non‐Ferrimagnetic Nanoporous Iron Oxide Microdisks

Strain Induced Modifications of Valence Band Features in Fe3O4 Epitaxial Heterostructures

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Low voltage induced reversible magnetoelectric coupling in Fe3O4 thin films for voltage tunable spintronic devices

Abstract: A giant ME coefficient of 368 Oe V−1 at 1.5 V with good reversibility can be effectively controlled by IL gating in Fe3O4, which could be used to design tunable spintronic devices.

Cited by 24 publications

References 47 publications

Voltage‐Control of Magnetism in All‐Solid‐State and Solid/Liquid Magnetoelectric Composites

Voltage‐Control of Magnetism in All‐Solid‐State and Solid/Liquid Magnetoelectric Composites

Voltage‐Induced ON Switching of Magnetism in Ordered Arrays of Non‐Ferrimagnetic Nanoporous Iron Oxide Microdisks

Strain Induced Modifications of Valence Band Features in Fe3O4 Epitaxial Heterostructures

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Low voltage induced reversible magnetoelectric coupling in Fe₃O₄ thin films for voltage tunable spintronic devices