LPE technology for power GaAs diode structures

Voitovich, Viktor; Rang, Toomas; Rang, G.

doi:10.3176/eng.2010.1.04

Cited by 4 publications

(3 citation statements)

References 8 publications

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“…However, despite a certain success, the results reached in improving the switching speed for power diodes based on Si or GaAs "homojunction" structures fail to fully satisfy the upto-date power electronics needs. The minimal switching time of about 30-50 ns was demonstrated for diodes with blocking voltage U b of about 400-600 V [13][14][15][16].…”

Section: A Fast Recovery Eepitaxial Diodes (Fred) For Pulsedmentioning

confidence: 99%

Defect engineering for carrier lifetime control in high voltage GaAs power diodes

Козлов

Soldatenkov

Danilchenko

et al. 2014

25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014)

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The paper considers the physical basis for the technique of controllable defect formation at heterointerfaces and in the bulk of epitaxial GaAs layers in the process of isovalent doping. Results of studying crystal defects and their rearrangement depending on the isovalent doping modes in the process of epitaxial growth are presented. The main aspects of the defect influence on the charge carrier lifetime as well as on the diode structure blocking voltage are analyzed. Particular cases of the developed technique application for controllable defect formation in fabricating such GaAs-based devices as Hyper Fast Recovery Epitaxial Diodes and Drift Step Recovery Diodes are considered.Keywords-gallium arsenide, liquid phase epitaxy, crystal defects, charge carrier lifetime, isovalent doping, turn-off time, fast recovery epitaxial diode, rise time, step recovery diode.

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Section: A Fast Recovery Eepitaxial Diodes (Fred) For Pulsedmentioning

confidence: 99%

Defect engineering for carrier lifetime control in high voltage GaAs power diodes

Козлов

Soldatenkov

Danilchenko

et al. 2014

25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014)

View full text Add to dashboard Cite

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“…This epitaxial growth offers the ability to create 120 µm thicker devices and thus to achieve blocking voltages higher than 1000 V. Nevertheless due to the technological limitations, it is challenging for engineers to grow pure and lightly doped intrinsic GaAs. Investigations on the interactions between the quartz reactor, vaporised oxygen, and molten gallium proved that the homogenisation process of the liquefied gallium only takes place before epitaxial growth, if the environment is additionally doped with Si atoms by adding vaporised oxygen into the gas environment [2, 5]. The equipment for the growth of the GaAs epitaxial layers is shown in Fig.…”

Section: Gallium Arsenide (Gaas) Properties and Technologymentioning

confidence: 99%

Gallium arsenide semiconductor parameters extracted from pin diode measurements and simulations

Bhojani¹,

Kowalsky²,

Simon³

et al. 2016

IET Power Electronics

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To understand the functioning of the gallium arsenide (GaAs) pin diode and to allow predictive simulations it is essential to have knowledge of the underlying physics. The GaAs pin diode is described with the help of experimental and simulation results. The static characteristics of 15 A-600 V GaAs pin diodes were measured at ambient and elevated temperature. A quasi-one-dimensional simulation model was designed and compared with experimentally measured results. The surge current behaviour was investigated for GaAs pin diodes at two different temperatures. A thermal simulation was performed to give an overview over temperature distribution inside the GaAs pin diode. Several important physical device models and various parametric data were incorporated for theoretical investigation of these diodes. Good agreement between experimental and simulated results of GaAs pin diodes was found at all temperatures.

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“…Typically the cost-competitive manufacturing technology uses the Liquid Phase Epitaxy (LPE) solution (e.g. [5][6][7]), and the analysis of electrical characteristics under different ambient conditions have been carried out using numerical experiments (e.g. [8][9]).…”

Section: Introductionmentioning

confidence: 99%

Characterization of the temperature dependent behavior of snappy phenomenon by the switching-off of GaAs power diode structures

Koel¹,

Rang²,

Rang³

2014

WIT Transactions on Engineering Sciences

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Power semiconductor devices are facing different failure mechanisms which limit the safe operating area of these devices. Two different mechanisms influence the thermal behaviour of power devices, first the ambient temperature, and secondly self-heating phenomenon described traditionally over the lattice thermal behaviour model. It is demonstrated in different published materials how the device internal processes can be investigated by means of device numerical simulation procedure. In our paper we focus on the numerical analysis of GaAs based power pin structures applied for detection of anomalies in the switching process of devices taking into account the influence of ambient temperature amplified by the self-heating phenomenon introduced over the lattice thermal model. Due to the fact that the switch-off of power diode structures is one of most critical acts in different power converters, like for example DC/DC converters, we put our focus on the exact thermal description of the devices under the switching process. Special effort has been taken for the situations, where during the switching process the total thermal situation leads the device close to the thermal breakdown instead of normal electrical breakdown. The influence of current crowding plasma generation near the metallic contacts seems to take place. The smooth snappy switching characteristics behaviour and it's mechanism under the temperature influence is simulated and the results are presented. Examples on current destabilizing effects in the switching process and the limitations of switching current detected from the device simulation are discussed.

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LPE technology for power GaAs diode structures

Cited by 4 publications

References 8 publications

Defect engineering for carrier lifetime control in high voltage GaAs power diodes

Defect engineering for carrier lifetime control in high voltage GaAs power diodes

Gallium arsenide semiconductor parameters extracted from pin diode measurements and simulations

Characterization of the temperature dependent behavior of snappy phenomenon by the switching-off of GaAs power diode structures

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