&lt;title&gt;Automated optical proximity correction: a rules-based approach&lt;/title&gt;

Otto, O.W.; Garofalo, Joseph G.; Low, Kevin; Yuan, Chi–Min; Henderson, Richard C.; Pierrat, Christophe; Kostelak, R. L.; Vaidya, S.; Vasudev, P.K.

doi:10.1117/12.175422

Cited by 69 publications

(25 citation statements)

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“…Hence, if there are two elbows close to each other, there may be a short circuit near the corners. This effect has also been discussed in [12]. In the case of "open ends," the ends tend to shrink and there is a shortening in line length.…”

Section: ) Critical Features In Masksmentioning

confidence: 88%

Automated evaluation of critical features in VLSI layouts based on photolithographic simulations

Sengupta

Cavallaro

Wilson

et al. 1997

IEEE Trans. Semicond. Manufact.

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In this paper, we address the problem of identifying and evaluating "critical features" in an integrated circuit (IC) layout. The "critical features" (e.g., nested elbows and open ends) are areas in the layout that are more prone to defects during photolithography. As feature sizes become smaller (sub-micron range) and as the chip area becomes larger, new process techniques (such as, using phase shifted masks for photolithography), are being used. Under these conditions, the only means to design compact circuits with good yield capabilities is to bring the design and process phases of IC manufacturing closer. This can be accomplished by integrating photolithography simulators with layout editors. However, evaluation of a large layout using a photolithography simulator is time consuming and often unnecessary. A much faster and efficient method would be to have a means of automatically identifying "critical features" in a layout and then evaluate the "critical features" using a photolithography simulator. Our technique has potential for use either to evaluate the limits of any new and nonconventional process technique in an early process definition phase or in a mask house, as a postprocessor to improve the printing capability of a given mask. This paper presents a CAD tool (An Integrated CAD Framework) which is built upon the layout editor, Magic, and the process simulator, Depict 3.0, that automatically identifies and evaluates "critical features."

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Section: ) Critical Features In Masksmentioning

confidence: 88%

Automated evaluation of critical features in VLSI layouts based on photolithographic simulations

Sengupta

Cavallaro

Wilson

et al. 1997

IEEE Trans. Semicond. Manufact.

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“…In optical lithography, the trend is to correct for these effects by predistorting the mask patterns, to compensate [15][16][17].…”

Section: Optical Proximity Correctionmentioning

confidence: 99%

Optical lithography—a historical perspective

Ronse

2006

Comptes Rendus. Physique

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“…According to this, we design a precise and effective OPC system called MR-OPC, which integrates two kinds of methods: rules-based technology and model-based technology. The rules-based technology [10,11] is much faster but cannot obtain high precision. On the contrary, the model-based technology [12][13][14] is slow because of the cost of the precise image.…”

Section: Introductionmentioning

confidence: 99%

Application of optical proximity correction technology

Cai

Zhou

Hong

et al. 2008

Sci. China Ser. F-Inf. Sci.

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As process technology scales down to very deep sub-micron (VDSM) in semiconductor manufacturing technology, intrinsic size becomes close to or even shorter than the wavelength used for optical lithography. Thus, some distortions and deformations are introduced by optical proximity effects (OPE) mainly caused by the diffraction and interference of exposure light when layout patterns on a mask are transcribed to a wafer, which influence on the yield and performance of IC circuit. In order to compensate for the deformations, optical proximity correction (OPC) is the most commonly used methodology. Presently, the OPC method is to use a unitary toleration on the whole chip layer, which makes the run time of OPC algorithm longer, causes the size of GDSII files to follow exponential growth, and results in the cost of making mask grow immensely. Firstly, this paper proposes a selfadaptation OPC method with preprocessing function of patterns classification. According to the need of the correction precision, the OPC system divides patterns corrected into two groups with different toleration: critical patterns and general patterns, which enhance the efficiency of the OPC approach. Secondly, a model-based OPC method is presented based on pattern subsection and classification, which keeps the precision of the correction as well as enhances the efficiency. We also propose a rule-based OPC method with general, concise and complete correction rules, and achieve automatic-built rules-based and its looking-up. Thirdly, we also implement an OPC system, called MR-OPC; the MR-OPC system integrates both rule-based OPC and model-based OPC into a whole, so it can solve the confliction between the efficiency and precision. Experimental results show that the MR-OPC system we suggested has advantages of the efficiency and expansibility. OPC, rules-based, model-based, layout, IC

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<title>Automated optical proximity correction: a rules-based approach</title>

Cited by 69 publications

References 1 publication

Automated evaluation of critical features in VLSI layouts based on photolithographic simulations

Automated evaluation of critical features in VLSI layouts based on photolithographic simulations

Optical lithography—a historical perspective

Application of optical proximity correction technology

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