&lt;title&gt;Fabrication of periodical structures with the help of chalcogenide inorganic resists&lt;/title&gt;

Shepeljavi, Peter E.; Kostyukevych, Sergey A.; Индутный, И. З.; Stronski, A.

doi:10.1117/12.190907

Cited by 12 publications

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“…Easily dissolved in various alkaline etchants Ch VS layers after photostimulated interaction with metal have good resistive properties to this etchants [3,6,17,18,24,35,42,72,[88][89][90][91][92]. Selective etching properties ofChVS layers were investigated in detail also in many works [3,14,16,17,18,23,71,72,88,[93][94][95][96][97][98].…”

Section: Chemical Propertiesmentioning

confidence: 99%

“…The etching dependencies of photodoped and nondoped Gez,Stl7, in aqeous solutions of NH3 ( Fig.12 ) are typical for most of Ch VS-Ag systems [3]. Ch VS-Ag systems have high contrast y values ( 2.5-10 ), fur example for AsaS3-Ag and GeS:z-Ag systems y values are 4.5 and 3.3, correspondingly [18,72 ], for As.G~OS66-Ag system -3.7 [91]. Such drastic differences in etching rates (up to 500 ) provide possibility of obtaining relief images.…”

Section: Chemical Propertiesmentioning

confidence: 99%

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Microelectronic Interconnections and Assembly

Harman¹,

Mach²

1998

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The electronic index to the NATO ASI Series provides full bibliographical references (with keywords and/or abstracts) to about 50,000 contributions from international scientists published in all sections of the NATO ASI Series. Access to the NATO-PCO-DATA BASE is possible via a CD-ROM "NATO Science and Technology Disk" with user-friendly retrieval software in English, French, and German (©WTV GmbH and DATAWARE Technologies, Inc. 1989). The CD-ROM contains the AGARD Aerospace Database.The CD-ROM can be ordered through any member of the Board of Publishers or through NATO-PCO,

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Section: Chemical Propertiesmentioning

confidence: 99%

Section: Chemical Propertiesmentioning

confidence: 99%

Microelectronic Interconnections and Assembly

Harman¹,

Mach²

1998

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“…Both effects lead to substantial changes in ChG layer solubility rates, which makes the production of various relief images possible. Numerous publications and patents that followed have shown the ways of their practical applications in optical storage [3][4], microelectronics [5][6], optoelectronics, holography , and diffraction optics [7][8][9][10][11]. The investigations have shown the perspectiveness of such media utilization for the recording of phase-relief holograms, in particular for holographic optical elements (HOE) production.…”

Section: Introductionmentioning

confidence: 99%

<title>Chalcogenide inorganic resists as holographic recording media</title>

et al. 1998

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In present paper the utilization of the two types of inorganic resists: Ag-chalcogenide glass (ChG) structures and thin ChG layers for holograms recording is discussed. The optical characteristics and photographic properties of this materials were investigated, the study of hologram relief formation in ChGAg and ChG layers have been made. Among the investigated ChG layers the As40S20Se40 have shown the most optimal characteristics for the hologram recording. Good mechanical strength and thermostability of ChG layers enabled to use the obtained phase relief holograms after additional treatment for the production of thermo-or photopolymer copies, or galvanic nickel deposition. The high quality polymer copies and nickel matrixes for mass production were obtained from the chalcogenide based master holograms. characteristics of the obtained phase-relief holograms and their copies were investigated.

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“…The polymerization processes which undergo under exposure or annealing are clearly seen in Raman spectra of As40S60 Se films, where features corresponding to the homopolar bonds are decreased and spectra are nearing to the bulk ones [161.2.2 Etching processesThin As-S-Se layers have good ability to modify their solubility in alkaline solvents by exposure to light ( UV, VIS, etc. )17] . In present work the etching characteristics of As4oS6oSe thin films in amine based etching solutions are considered for thin films with thicknesses 0,4-5 jim.…”

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confidence: 95%

“…polarization, curve 3-reflection of Al. In the maxima of spectral distribution of T the values of the Fig.6800 diffraction efficiency reach 60-70 % for nonpolarized light, for polarized light i values reach 80-90 % [5-7,10,[16][17][18]. High quality of the obtained surface-relief structures ( gratings) is characterized also by low level of stray light ( -106)[5,7,18].…”

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<title>Application of As-S-Se chalcogenide inorganic resists in diffractive optics</title>

Stronski

1999

SPIE Proceedings

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In present paper the lightsensitive properties and application in diffractive optics of As-S-Se inorganic resists are reviewed. Basic characteristics ofAs-S-Se layers are considered. Among them are optical properties , Raman spectra and their evolution under various treatments. Investigations of chemical properties have shown the good resistive properties of As-S-Se layers in various amine based etching solutions. The lightsensitivity properties ( characteristic curves) are presented. The suiface reliefformation was investigated by means ofnumerical simulation and experimental investigations.Ways of optimizing media parameters, exposure and treatment processes are shown. Good mechanical strength and thermostability ofAs-S-Se layers enabled to use the obtained reliefpatterns after additional treatmentfor the production of high quality copies. Phase-relief holographic optical elements (HOE), recorded by using such resists, may be used as lithographic mask for the relief transfer into the substrates material by wet or dry etching, that enable to form HOE ( Fresnel lenses, gratings) in glass, quartz, etc. Characteristics of the obtained holographic optical elements are examined. Diffraction efficiency values of the holographic gratings were close to the theoretical ones.

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<title>Fabrication of periodical structures with the help of chalcogenide inorganic resists</title>

Cited by 12 publications

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Microelectronic Interconnections and Assembly

Microelectronic Interconnections and Assembly

<title>Chalcogenide inorganic resists as holographic recording media</title>

<title>Application of As-S-Se chalcogenide inorganic resists in diffractive optics</title>

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