&lt;title&gt;Improvement of metal step coverage of VLSI device structures in a manufacturing environment&lt;/title&gt;

MacNaughton, R. B.; Wonacott, T. H.; Liao, De-Dui; Hoang, Hoang Huy

doi:10.1117/12.145469

Cited by 2 publications

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“…From a lithographic standpoint, the sidewall slope is important for metal step coverage since a vertical profile could lead to gaps in the metal coverage due to sputtering characteristics [4]. Since subsequent processing after redistribution requires sputtering, the SINR photoresist also must exhibit an appropriate sidewall slope.…”

Section: Introductionmentioning

confidence: 99%

A novel photosensitive material for redistribution and stress buffer reduction on 300mm wafers

Flack¹,

Nguyen²,

Capsuto

2006

SPIE Proceedings

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The widespread adoption of advanced packaging techniques is driven by electrical device performance and chip form factor considerations. Flipchip packaging is currently growing at a 25% compound annual rate and it is expected that 90% of all 65 nm logic devices will be bumped. To ensure optimal productivity and cost of ownership, it is imperative to employ lithographic materials that are optimized for these applications and that meet all device specifications.Bump processing typically has one or more levels that require a permanent layer either to relieve stress on the die (stress buffer layer) or to redistribute electrical connections (redistribution layer). Since these layers remain on the wafer, the mechanical and electrical properties of the material are as important as the lithographic properties. This study will characterize a novel negative, siloxane (Shin-Etsu SINR ® ) photoresist for the redistribution and stress buffer application on 300 mm wafers. Siloxanes are a good choice for redistribution and stress buffer layers because of their excellent physical properties, ease of processing and relatively low cure temperatures.The lithographic performance of the SINR is optimized using a broad band, low numerical aperture, 1X stepper. This study evaluates softbake, post exposure bake (PEB), develop conditions and exposure optimization. Due to decreasing feature size at the redistribution level, it is critical to demonstrate CD uniformity and resolution across the entire 300 mm wafer surface. While the CD uniformity data is collected on 300 mm wafers, all process optimization results will be applicable for all standard wafer sizes. The physical properties of the SINR material are evaluated through curing temperature studies and sputtering tests.

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Section: Introductionmentioning

confidence: 99%

A novel photosensitive material for redistribution and stress buffer reduction on 300mm wafers

Flack¹,

Nguyen²,

Capsuto

2006

SPIE Proceedings

View full text Add to dashboard Cite

show abstract

“…From a lithographic standpoint, the sidewall slope is important for metal step coverage since a vertical profile could lead to gaps in the metal coverage due to sputtering characteristics [6]. Since subsequent processing after redistribution requires sputtering, the SINR photoresist also must exhibit an appropriate sidewall slope.…”

mentioning

confidence: 99%

Characterization of a novel photoresist redistribution material for advanced packaging applications

Flack¹,

Nguyen²,

Capsuto³

2002

SPIE Proceedings

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The widespread adoption of advanced packaging techniques is primarily driven by electrical device performance and chip form factor considerations. Flip chip packaging is currently growing at a 27% compound annual rate and it is expected that by 2005 over 60% of all 300 mm wafers will be bumped [1]. To ensure optimal productivity and cost of ownership it is imperative to provide lithographic materials that are optimized for these applications.Flip chip packaging frequently uses one or more redistribution levels to increase the number of pads that can be bumped in the minimum form factor. The redistribution level requires a photosensitive dielectric material to be used as a permanent insulating layer. The mechanical, electrical and lithographic properties of the material for this level are all important. This study will characterize a novel photosensitive siloxane material (Shin-Etsu SINR™ Photoresist) for the use in the redistribution layer. Siloxanes are a good choice for redistribution because of their excellent physical properties, ease of processing and relatively low curing temperatures.The lithographic performance of SINR photoresist has been optimized using a broad band 1X stepper to control critical dimensions (CD). This study evaluates process capability at multiple exposure wavelengths and post exposure bake (PEB) conditions. Cross sectional SEM analysis, process linearity, Bossung plots and process windows are used to establish the lithographic capabilities. Material modifications also were investigated to control the photoresist sidewall angles.

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<title>Improvement of metal step coverage of VLSI device structures in a manufacturing environment</title>

Cited by 2 publications

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A novel photosensitive material for redistribution and stress buffer reduction on 300mm wafers

A novel photosensitive material for redistribution and stress buffer reduction on 300mm wafers

Characterization of a novel photoresist redistribution material for advanced packaging applications

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