<title>Mechanism and annihilation of shallow-trench-isolation-enhanced poly-mask-edge N<formula>^{<roman>+</roman>}</formula>/P-well junction leakage</title>

Abstract

The dislocation at the trench corner under Poly mask edges was found to be the major killer ofjunction leakage in generic logic technology. The impact of the sacrificial oxide (SAC-OX) of the well ion implantation (I/I) module and the source/drain (S/D) I/I to the defect formation are investigated for the first time. The influence on NVP-Welljunction leakage caused by the I/I sacrificial oxide from the Rapid Thermal Oxidation (RTO) and Furnace Oxidation (FO) are evaluated by using the process monitoring test structures. Based on the analysis of test structures and the yield evaluation of product, the optimized condition is proposed.