&lt;title&gt;Silicon grisms fabricated by anisotropic wet etching and direct silicon bonding for high-resolution IR spectroscopy&lt;/title&gt;

Cianci, E.; Foglietti, V.; Vitali, F.; Lorenzetti, D.

doi:10.1117/12.442946

Cited by 3 publications

(1 citation statement)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Besides thinning by KOH etching currently has been applied maturely to exposure TSVs in via-first and via-mid flows [9]. Furthermore, KOH etching is also a feasible strategy to develop required cavities and microstructures after wafer bonding by anisotropic etching [10]. In addition, eutectic alloys in wafer bonding can be used as a natural etch-stop layer for KOH etching, e.g.…”

Section: Journal Of Micromechanics and Microengineeringmentioning

confidence: 99%

The Au/Si eutectic bonding compatibility with KOH etching for 3D devices fabrication

Liang

Liu

et al. 2017

J. Micromech. Microeng.

View full text Add to dashboard Cite

KOH etching and Au/Si eutectic bonding are cost-efficient technologies for 3D device fabrication. Aimed at investigating the process compatibility of KOH etching and Au/Si bonding, KOH etching tests have been carried out for Au/bulk Si and Au/amorphous Si (a-Si) bonding wafers in this paper. For the Au/bulk Si bonding wafer, a serious underetch phenomenon occurring on the damage layer in KOH etching definitely results in packaging failure. In the microstructure analysis, it is found that the formation of the damage layer between the bonded layer and bulk Si is attributed to the destruction of crystal Si lattices in Au/bulk Si eutectic reaction. Considering the occurrence of underetch for Au/Si bonding must meet two requirements: the superfluous Si and the defective layer near the bonded layer, the Au/a-Si bonding by regulating the a-Si/Au thickness ratio is presented in this study. Only when the a-Si/Au thickness ratio is relatively low are there not underetch phenomena, of which the reason is the full reaction of the a-Si layer avoiding the formation of the damage layer for easy underetch. Obviously, the Au/a-Si bonding via choosing a moderate a-Si/Au thickness ratio (⩽1.5:1 is suggested) could be reliably compatible with KOH etching, which provides an available and low-cost approach for 3D device fabrication. More importantly, the theory of the damage layer proposed in this study can be naturally applied to relevant analyses on the eutectic reaction of other metals and single crystal materials.

show abstract

Section: Journal Of Micromechanics and Microengineeringmentioning

confidence: 99%

The Au/Si eutectic bonding compatibility with KOH etching for 3D devices fabrication

Liang

Liu

et al. 2017

J. Micromech. Microeng.

View full text Add to dashboard Cite

show abstract

A review on fabrication of blazed gratings

Gao

Chen

et al. 2021

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Ultra-precision manufacturing plays a critical role in the successful development of various technological fields and has a significant influence on the processes conducted in human society. Blazed gratings with periodically inclined structures exhibit satisfactory characteristics, concentrating most of the diffracted light to a single, non-zero order. In addition to their high diffraction efficiency, blazed gratings can also significantly improve the sensitivity, resolution, and measurement range of grating measurement systems; they are also core functional components for improving ultra-precision manufacturing. Significant research and industrial attention have been devoted toward the manufacturing of blazed gratings. This review describes the physical principles of blazed gratings, the specific approaches used, and the achievements of typical processing methods, including mechanical ruling, holographic ion beam etching, electron beam lithography, and wet etching. The advantages and disadvantages of these fabrication methods were addressed, and prospective approaches were proposed to improve the manufacturing of blazed gratings.

show abstract

On-sky tests of an A/R coated silicon grism on board NICS at TNG

Vitali

Foglietti

Lorenzetti

et al. 2014

Advances in Optical and Mechanical Technologies for Telescopes and Instrumentation

View full text Add to dashboard Cite

We present the results of our project for the design and construction and on-sky test of silicon grisms. The fabrication of such devices is a complex and critical process involving litho-masking, anisotropic etching and direct bonding techniques. After the successful fabrication of the silicon grating, we have optimized the bonding of the grating onto the hypotenuse of a silicon prism to get the final prototype. After some critical phases during the experimentation a silicon grism with 363 grooves/mm and a blaze angle of 14 degrees has been eventually fabricated. The application of an A/R coating on both the surfaces has been the last step: this procedure is critical because of the groove geometry of the diffraction grating, whose performace might be compromised by the coating. Then, the grism was inserted in the filter wheel of the Near Infrared camera NICS, at the focal plane of the National Galileo Telescope (TNG), the 3.5 m Italian facility in the Canary Islands (E). The result of the on-sky tests are given in detail.

show abstract

<title>Silicon grisms fabricated by anisotropic wet etching and direct silicon bonding for high-resolution IR spectroscopy</title>

Cited by 3 publications

References 14 publications

The Au/Si eutectic bonding compatibility with KOH etching for 3D devices fabrication

The Au/Si eutectic bonding compatibility with KOH etching for 3D devices fabrication

A review on fabrication of blazed gratings

On-sky tests of an A/R coated silicon grism on board NICS at TNG

Contact Info

Product

Resources

About